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Featured researches published by Cyril Buttay.


Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT) | 2012

High Temperature Ageing of Fe-based Nanocrystalline Ribbons

Christian Martin; Rémi Robutel; Cyril Buttay; Fabien Sixdenier; Pascal Bevilacqua; Hervé Morel; Régis Meuret

The impact of long-term high-temperature stress on nanocrystalline Finemet materials is measured by keeping samples at 200 °C for 1300 hours. The standard industrialized, high permeability Finemet materials as well as the recently available low permeability Finemet materials are investigated. Characterizations are performed at different frequencies, temperatures and magnetic field excitations on both aged and non-aged samples. Their complex permeability is also measured during the ageing test. Irreversible changes are pointed out on permeability, coercive field and magnetic flux density at saturation. Regarding the design considerations for high temperature power electronics, the suitability of these materials is demonstrated but an ageing effect has to be considered nonetheless. The presented data can be extrapolated to several thousand hours at 200 °C using the presented empiric ageing law.


Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT) | 2013

High temperature, Smart Power Module for aircraft actuators

Khalil El Falahi; Stanislas Hascoët; Cyril Buttay; Pascal Bevilacqua; Luong Viet Phung; Dominique Tournier; Bruno Allard; Dominique Planson

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.


Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT) | 2014

Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg

Raphaël Riva; Cyril Buttay; Marie-Laure Locatelli; Vincent Bley; Bruno Allard

In this paper, we present a small (25x25x3 mm 3 ) power module that integrates two silicon-carbide (SiC) JFETs to form an inverter leg. This module has a sandwich structure, i.e. the power devices are placed between two ceramic substrates, allowing for heat extraction from both sides of the dies. All interconnects are made by silver sintering, which offers a very high temperature capability (the melting point of pure silver being 961 °C). The risk of silver migration is assessed, and we show that Parylene-HT, a dielectric material that can sustain more than 300 °C, can completely coat the module, providing adequate protection.


HiTEC | 2012

An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Dominique Bergogne; Fabien Dubois; Christian Martin; Khalil El Falahi; Luong Viet Phung; Cyril Buttay; Sonia Dhokkar; Bruno Allard; Régis Meuret; Hervé Morel

Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from -55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) flters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.


Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT) | 2011

Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay; Amandine Masson; Jianfeng Li; Mark Johnson; Mihai Lazar; Christophe Raynaud; Hervé Morel


2012 7th International Conference on Integrated Power Electronics Systems (CIPS) | 2012

Evaluation of silver-sintering die attach

Wissam Sabbah; Raphaël Riva; Stanislas Hascoët; Cyril Buttay; Stephane Azzopardi; Eric Woirgard; Dominique Planson; Bruno Allard; Régis Meuret


PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of | 2015

Robustness in short-circuit Mode of SiC MOSFETs

Cheng Chen; Denis Labrousse; Stéphane Lefebvre; Mickael Petit; Cyril Buttay; Hervé Morel


PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of | 2014

Integrated packaging allows for improvement in switching characteristics of silicon carbide devices

Cyril Buttay; Khalil El Falahi; Rémi Robutel; Stanislavs Hascoet; Bruno Allard; Christian Martin; Mark Johnson


CIPS | 2014

Planar, Double-Layer Magnetic Inductors for Low Power, High Frequency DC-DC Converters

Elias Haddad; Christian Martin; Charles Joubert; Bruno Allard; Cyril Buttay; Tony Abi Tannous; Pascal Bevilacqua


PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of | 2016

GaN Active-Clamp Flyback Converter with Resonant Operation Over a Wide Input Voltage Range

Nicolas Quentin; Rémi Perrin; Christian Martin; Charles Joubert; Bertrand Lacombe; Cyril Buttay

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Denis Labrousse

École normale supérieure de Cachan

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Stéphane Lefebvre

Conservatoire national des arts et métiers

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Cheng Chen

École normale supérieure de Cachan

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Chenjiang Yu

University of Paris-Sud

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Dominique Bergogne

Institut national des sciences Appliquées de Lyon

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