Daniel Gloria

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S/sub 21/ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 /spl mu/m/spl times/30 /spl mu/m) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

0.13

This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.

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This paper presents optimized very high performance CMOS slow-wave shielded CPW transmission lines (S-CPW TLines). They are used to realize a 60-GHz bandpass filter, with T-junctions and open stubs. Owing to a strong slow-wave effect, the longitudinal length of the S-CPW is reduced by a factor up to 2.6 compared to a classical microstrip topology in the same technology. Moreover, the quality factor of the realized S-CPWs reaches 43 at 60 GHz, which is about two times higher than the microstrip one and corresponds to the state of the art concerning S-CPW TLines with moderate width. For a proof of concept of complex passive device realization, two millimeter-wave filters working at 60 GHz based on dual-behavior-resonator filters have been designed with these S-CPWs and measured up to 110 GHz. The measured insertion loss for the first-order (respectively, second-order) filter is -2.6 dB (respectively, -4.1 dB). The comparison with a classical microstrip topology and the state-of-the-art CMOS filter results highlights the very good performance of the realized filters in terms of unloaded quality factor. It also shows the potential of S-CPW TLines for the design of high-performance complex CMOS passive devices.

m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated.

High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters

This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f<inf>MAX</inf>. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak f<inf>MAX</inf> of 423 GHz (f<inf>T</inf> = 273 GHz) is demonstrated in SiGe:C HBT technology.

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

Today, SiGe HBT and MOSFET cut-off frequencies are higher than 230 GHz (Chevalier et al., 2004) and this increase allows new millimeter wave (MMW) applications on silicon such as 60 GHz WLAN and 77 GHz automotive radar. This study focuses on a wireless communication block with the antenna integration. Functions such as amplifier and filter have been used to perform this block. This is a demonstration of individual component integration and co-integration with antenna/LNA matching. Antenna achieved on advanced sub 120nm HCMOS high resistivity silicon on insulator (HR SOI) (p >1 kOhms.cm) has been designed and integrated. A low noise amplifier (LNA) and a filter have been retained for this first chain. Antenna and block characterizations are led on a dedicated on-wafer test bench. Antenna performances in term of gain and radiation pattern are given. A communication link has been then established between a single antenna (-2 dB gain) and the full communication block with a -19 dB transmission gain at 40 GHz

0.13μm SiGe BiCMOS technology for mm-wave applications

Today, measurement of 65 nm CMOS technology demonstrates Ft around 200 GHz and Fmax higher than 250 GHz as stated in G. Dambrine et al. (2005), which are clearly comparable to advanced commercially available 100 nm III-V HEMT or state-of-the-art SiGe HBT based in P. Chevalier et al. (2004). This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip microstrip and coplanar waveguide, which have been achieved in STMicroelectronics 65 nm RF CMOS bulk (p=20 mOmegamiddotcm) and HR SOI (p> 1kOmegamiddotcm) processes, were characterized up to 220 GHz. In addition, active device performances are reviewed. Then, circuit examples are given up to 220 GHz. Finally, a benchmarking with state of the art Si, III-V and HR SOI comparable transmission lines (TLs) structures is proposed

Silicon full integrated LNA, filter and antenna system beyond 40 GHz for MMW wireless communication links in advanced CMOS technologies

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.