S. Boret

30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S/sub 21/ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 /spl mu/m/spl times/30 /spl mu/m) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

0.13

This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models.

\mu

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

Today, measurement of 65 nm CMOS technology demonstrates Ft around 200 GHz and Fmax higher than 250 GHz as stated in G. Dambrine et al. (2005), which are clearly comparable to advanced commercially available 100 nm III-V HEMT or state-of-the-art SiGe HBT based in P. Chevalier et al. (2004). This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip microstrip and coplanar waveguide, which have been achieved in STMicroelectronics 65 nm RF CMOS bulk (p=20 mOmegamiddotcm) and HR SOI (p> 1kOmegamiddotcm) processes, were characterized up to 220 GHz. In addition, active device performances are reviewed. Then, circuit examples are given up to 220 GHz. Finally, a benchmarking with state of the art Si, III-V and HR SOI comparable transmission lines (TLs) structures is proposed

0.13μm SiGe BiCMOS technology for mm-wave applications

We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.

65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHZ

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the junctions and employed for junction discontinuities, T- and cross-junctions. In order to validate these assertions, simulated and experimental data on classical quarter-wavelength shunt-stub filters are first presented. Then the design of traditional coupled-line filters is examined. The problems in terms of insertion loss associated with these kinds of narrow-band applications are discussed here. Minimization of insertion losses requires increasing the width of the strips. Consequently, the design becomes complex and modeling using transmission-line models less accurate. Nevertheless, as an optimization procedure is needed to tune the filter theoretically, such a very fast design method is necessary. Simulated and experimental results in the range 500 MHz to 110 GHz are compared throughout the paper.

Record RF performance of standard 90 nm CMOS technology

Today, measurement of 65 nm CMOS [Dambrine, G., et al., 2005] and 130 nm-based SiGe HBTs [Chevalier, p. et al., 2004] technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip coplanar waveguides (CPWs), which have been achieved in STMicroelectronics advanced nanometric RF CMOS High Resistivity (HR) SOI (rho > 1 kOmegaldrcm) process, and characterized up to 220 GHz are reported. Moreover, for the first time passive circuits working @ 220 GHz have been achieved and characterized demonstrating state-of-the-art performances and good agreement with electric simulations using developed models.

Wide- and narrow-band bandpass coplanar filters in the W-frequency band

In this paper, a comparison between transmission line (TL) integrated in high resistivity (HR) silicon on insulator technology (SOI), standard CMOS and InP technologies is made. State of the art performances are reported on HR SOI with loss propagation of about 0.4 dB/mm@40 GHz and < 1 dB/mm@100 GHz. These results demonstrate that using HR SOI wafer suppressed substrate losses (like for III-V technology). In addition, model has been developed for the described TL. To illustrate these results two microwave passive circuits, a 80 GHz coupler and a 80-100 GHz band-pass filter with both 2.5dB insertion losses (for the HR SOI version) have been realized in standard bulk CMOS and HR SOI technologies for comparison and modelization purpose.

1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS Technology

Silicon planar and 3D inductors and transformers were designed and characterized on wafer up to 100 GHz. Self-resonance frequencies (SRF) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz WLAN or 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S/sub 21/ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 /spl mu/m /spl times/ 30 /spl mu/m) than planar transformers or microstrip couplers.

State of the art integrated millimeter wave passive components and circuits in advanced thin SOI CMOS technology on high resistivity substrate

This paper presents high-Q and high-inductance-density on-chip inductors made on high resistivity (HR) substrate using STMicroelectronics LP 65 nm SOI CMOS technology with 6 copper metal layers. For the first time, on-chip inductor architectures dedicated to HR SOI CMOS technology are reported and benchmarked with current one used in standard RF CMOS technologies. According to the measurement results, proposed 3D HR SOI inductor occupies only 50% of the area of the conventional planar spiral inductor with the same inductance and similar quality factor. By virtue of the small area consumed by those 3D inductors, the size and cost of the radio frequency (RF) chip integrated on HR SOI can be significantly reduced in comparison with standard bulk technology which reenforces the advantage of SOI technology for RF applications.