Daniel Kueck

Performance and ruggedness of 1200V SiC — Trench — MOSFET

This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications.

1200V SiC Trench-MOSFET optimized for high reliability and high performance

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.

650V SiC JFET for High Efficiency Applications

This paper presents for the first time a 650V SiC JFET switch. Although this application class is highly competitive and occupied by Silicon devices the characterization data show unique features which make the SiC switch an outstanding option for future system integration.

Investigation on wet etching 4H-SiC damaged by ion implantation

In this work investigation on wet etching of ion implanted 4H-SiC has been performed. Starting with the search for a suitable etching solution is followed by investigations on how to damage 4H-SiC in an efficient way involving different implantation species in various doses. With the help of Monte Carlo simulations a model for the experimental findings is proposed to derive the limitations for the wet etch capability.