David C. Sheridan

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

This paper discusses and illustrates the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier (PA) applications. Experimental results addressing ruggedness, ac performance, and safe operating area for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless PA applications are considered. Circuit results for GSM, PCS, GPRS, and EDGE front-end modules have been obtained. A one-chip solution is demonstrated, including control circuitry and switching functionality, that supports all GPRS, PCS, and EDGE modes featuring output power at 33.8 dBm and overall power added efficiency of 37% withstanding voltage standing wave ratio conditions of 15:1.

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies

The rapidly expanding telecommunications market has led to a need for advanced rf integrated circuits. Complex rf- and mixed-signal system-on-chip designs require accurate prediction early in the design schedule, and time-to-market pressures dictate that design iterations be kept to a minimum. Signal integrity is seen as a key issue in typical applications, requiring very accurate interconnect transmission-line modeling and RLC extraction of parasitic effects. To enable this, IBM has in place a mature project infrastructure consisting of predictive device models, complete rf characterization, statistical and scalable compact models that are hardware-verified, and a robust design automation environment. Finally, the unit and integration testing of all of these components is performed thoroughly. This paper describes each of these aspects and provides an overview of associated development work.

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications

We present IBMs next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.

SiGe BiCMOS technologies for power amplifier applications

Silicon-germanium (SiGe) BiCMOS technology has advanced in many areas. In this paper, we discuss and illustrate the key device design issues for SiGe BiCMOS HBTs suitable for wireless power amplifier applications. The experimental results for high-breakdown SiGe HBTs built in several generations of BiCMOS technology are presented with focus on the 0.5 /spl mu/m SiGe BiCMOS node. Implications of recent high-performance SiGe HBT scaling achievements for BiCMOS technologies targeting wireless power amplifier applications are considered.

Advances in SiGe HBT BiCMOS technology

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

This paper presents modeling of correlated RF noise in the intrinsic base and collector currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The noises are first extracted from measured noise parameters using standard noise circuit analysis. Using the extraction results, model equations are proposed to describe both the frequency and bias dependence of the correlated noise sources using a single set of model parameters. The model is demonstrated using noise data from both measurement and microscopic noise simulation. The model is shown to work at frequencies up to at least half of the peak f/sub T/ and at biasing currents below high injection f/sub T/ rolloff.

Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs

This work presents experimental extraction of intrinsic base and collector current noise of SiGe HBTs as well as their correlation. Using the extraction results, several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, and the transport noise model. Connections and differences between various models are discussed.

Intermodulation linearity characteristics of CMOS transistors in a 0.13 /spl mu/m process

This work presents experimental characterization of intermodulation linearity of CMOS transistors from a 0.13 /spl mu/m process. The IIP3 in the saturation region is shown to increase with V/sub ds/, even though g/sub m/ saturates. The IIP3 in strong inversion is found to be higher than the IIP3 at the well known linearity sweet spot near the threshold voltage. Longer channel transistors and thick oxide transistors are found to have linearity advantages. The results provide useful guidelines for optimal biasing and device selection in RFIC design.

Generation and integration of scalable bipolar compact models [HBT example]

This paper investigates the methodologies for generating and integrating scalable bipolar models in the modern design environment. Additionally, fundamental bipolar parameter scaling is reviewed and demonstrated with a scalable SiGe HBT model valid for models such as VBIC, MEXTRAM, and HiCUM.