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Dive into the research topics where David S. Bergsman is active.

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Featured researches published by David S. Bergsman.


ACS Applied Materials & Interfaces | 2014

Improving Area-Selective Molecular Layer Deposition by Selective SAM Removal

Chaiya Prasittichai; Katie L. Pickrahn; Fatemeh Sadat Minaye Hashemi; David S. Bergsman; Stacey F. Bent

Area selective molecular layer deposition (MLD) is a promising technique for achieving micro- or nanoscale patterned organic structures. However, this technique still faces challenges in attaining high selectivity, especially at large MLD cycle numbers. Here, we illustrate a new strategy for achieving high quality patterns in selective film deposition on patterned Cu/Si substrates. We employed the intrinsically selective adsorption of an octadecylphosphonic acid self-assembled monolayer (SAM) on Cu over Si surfaces to selectively create a resist layer only on Cu. MLD was then performed on the patterns to deposit organic films predominantly on the Si surface, with only small amounts growing on the Cu regions. A negative potential bias was subsequently applied to the pattern to selectively desorb the layer of SAMs electrochemically from the Cu surface while preserving the MLD films on Si. Selectivity could be enhanced up to 30-fold after this treatment.


Journal of Vacuum Science and Technology | 2017

Correcting defects in area selective molecular layer deposition

Richard G. Closser; David S. Bergsman; Luis Ruelas; Fatemeh Sadat Minaye Hashemi; Stacey F. Bent

Area selective deposition, as used with atomic layer deposition and molecular layer deposition (MLD), is a rapidly emerging field of study due to its potential applications in micro- and nanoelectronic devices. Previous studies have shown successful area selective MLD of nanoscale organic thin films using self-assembled monolayers (SAMs) as blocking layers. In this report, the authors expand upon the use of SAMs by implementing an etching process for the removal of the SAM resist once the MLD film has been deposited. This process has the benefit of removing unwanted deposits, which improves MLD selectivity on a dielectric by 380-fold over using a SAM layer alone and enables twice the amount of polymer film to be selectively deposited compared to that in previous reports. Although the etching leaves intact the polymer film in unblocked regions, the clean removal of the polymer film is limited at pattern interfaces. This effect is attributed to intermolecular interactions, such as polymer entanglement and h...


ACS Applied Materials & Interfaces | 2018

Molecular Layer Deposition of a Highly Stable Silicon Oxycarbide Thin Film Using an Organic Chlorosilane and Water

Richard G. Closser; David S. Bergsman; Stacey F. Bent

In this study, molecular layer deposition (MLD) was used to deposit ultrathin films of methylene-bridged silicon oxycarbide (SiOC) using bis(trichlorosilyl)methane and water as precursors at room temperature. By utilizing bifunctional trichlorosilane precursors, films of SiOC can be deposited in a layer-by-layer manner, wherein a water co-reactant circumvents the need for plasma, high temperatures, or highly oxidizing precursors. In this manner, films could be grown without the degradation commonly seen in other SiOC deposition methods. Saturation behavior for both precursors was confirmed for the MLD process, and a constant growth rate of 0.5 ± 0.1 Å/cycle was determined. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy were used to verify the reaction between precursors and to gain insight into the final film composition. Unlike most MLD films, which grow polymers in a linear fashion, XPS analysis indicates that neighboring silanol groups within the films tend to condense, forming a highly cross-linked network structure, whereby, on average, two-thirds of silanol groups undergo a condensation reaction. Further indication of cross-linking is seen by XPS during in situ annealing, which shows exceptional temperature stability of the film up to 600 °C in vacuum, in contrast to linear SiOC films, which are known to degrade below this temperature. The films also exhibit high chemical stability against acids, bases, and solvents. A film density of 1.4 g/cm3 was measured by X-ray reflectivity, while the dielectric constant and refractive index were determined to be 2.6 ± 0.3 and 1.6 ± 0.1, respectively, at a 633 nm wavelength. The low dielectric constant, high ease of deposition, and exceptional thermal and chemical stabilities of this MLD SiOC film suggest that it may have potential applications for electronic devices.


Chemistry of Materials | 2017

Effect of Backbone Chemistry on the Structure of Polyurea Films Deposited by Molecular Layer Deposition

David S. Bergsman; Richard G. Closser; Christopher J. Tassone; Bruce M. Clemens; Dennis Nordlund; Stacey F. Bent


2014 ECS and SMEQ Joint International Meeting (October 5-9, 2014) | 2014

Molecular Layer Deposition of Nanoscale Organic Films for Nanoelectronics Applications

David S. Bergsman; Han Zhou; Stacey F. Bent


Chemistry of Materials | 2018

Formation and Ripening of Self-Assembled Multilayers from the Vapor-Phase Deposition of Dodecanethiol on Copper Oxide

David S. Bergsman; Tzu Ling Liu; Richard G. Closser; Katie Lynn Nardi; Nerissa Draeger; Dennis M. Hausmann; Stacey F. Bent


Chemistry of Materials | 2018

Mechanistic Studies of Chain Termination and Monomer Absorption in Molecular Layer Deposition

David S. Bergsman; Richard G. Closser; Stacey F. Bent


Advanced Functional Materials | 2018

Atomic and Molecular Layer Deposition of Hybrid Mo-Thiolate Thin Films with Enhanced Catalytic Activity

Callisto MacIsaac; Joel R. Schneider; Richard G. Closser; Thomas R. Hellstern; David S. Bergsman; Joonsuk Park; Yunzhi Liu; Robert Sinclair; Stacey F. Bent


Advanced Energy Materials | 2018

Interfacial Effects of Tin Oxide Atomic Layer Deposition in Metal Halide Perovskite Photovoltaics

Axel F. Palmstrom; James A. Raiford; Rohit Prasanna; Kevin A. Bush; Melany Sponseller; Rongrong Cheacharoen; Maxmillian C. Minichetti; David S. Bergsman; Tomas Leijtens; Hsin-Ping Wang; Vladimir Bulovic; Michael D. McGehee; Stacey F. Bent


Chemistry of Materials | 2017

Photoactivated Molecular Layer Deposition through Iodo−Ene Coupling Chemistry

Mie Lillethorup; David S. Bergsman; Tania E. Sandoval; Stacey F. Bent

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Christopher J. Tassone

SLAC National Accelerator Laboratory

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