Denis Demchenko

Selective Facet Reactivity During Cation Exchange in Cadmium Sulfide Nanorods

The partial transformation of ionic nanocrystals through cation exchange has been used to synthesize nanocrystal heterostructures. We demonstrate that the selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. In the case of copper(I) (Cu(+)) cation exchange in cadmium sulfide (CdS) nanorods, the reaction starts preferentially at the ends of the nanorods such that copper sulfide (Cu(2)S) grows inward from either end. The resulting morphology is very different from the striped pattern obtained in our previous studies of silver(I) (Ag(+)) exchange in CdS nanorods where nonselective nucleation of silver sulfide (Ag(2)S) occurs (Robinson, R. D.; Sadtler, B.; Demchenko, D. O.; Erdonmez, C. K.; Wang, L.-W.; Alivisatos, A. P. Science 2007, 317, 355-358). From interface formation energies calculated for several models of epitaxial connections between CdS and Cu(2)S or Ag(2)S, we infer the relative stability of each interface during the nucleation and growth of Cu(2)S or Ag(2)S within the CdS nanorods. The epitaxial attachments of Cu(2)S to the end facets of CdS nanorods minimize the formation energy, making these interfaces stable throughout the exchange reaction. Additionally, as the two end facets of wurtzite CdS nanorods are crystallographically nonequivalent, asymmetric heterostructures can be produced.

AFLOW: An Automatic Framework for High-throughput Materials Discovery

Abstract Recent advances in computational materials science present novel opportunities for structure discovery and optimization, including uncovering of unsuspected compounds and metastable structures, electronic structure, surface, and nano-particle properties. The practical realization of these opportunities requires systematic generation and classification of the relevant computational data by high-throughput methods. In this paper we present A flow (Automatic Flow), a software framework for high-throughput calculation of crystal structure properties of alloys, intermetallics and inorganic compounds. The A flow software is available for the scientific community on the website of the materials research consortium, aflowlib.org. Its geometric and electronic structure analysis and manipulation tools are additionally available for online operation at the same website. The combination of automatic methods and user online interfaces provide a powerful tool for efficient quantum computational materials discovery and characterization.

Formation mechanism and properties of CdS-Ag2S nanorod superlattices.

The mechanism of formation of recently fabricated CdS-Ag(2)S nanorod superlattices is considered and their elastic properties are predicted theoretically based on experimental structural data. We consider different possible mechanisms for the spontaneous ordering observed in these 1D nanostructures, such as diffusion-limited growth and ordering due to epitaxial strain. A simplified model suggests that diffusion-limited growth partially contributes to the observed ordering, but cannot account for the full extent of the ordering alone. The elastic properties of bulk Ag(2)S are predicted using a first principles method and are fed into a classical valence force field (VFF) model of the nanostructure. The VFF results show significant repulsion between Ag(2)S segments, strongly suggesting that the interplay between the chemical interface energy and strain due to the lattice mismatch between the two materials drives the spontaneous pattern formation.

Determining factors of thermoelectric properties of semiconductor nanowires

It is widely accepted that low dimensionality of semiconductor heterostructures and nanostructures can significantly improve their thermoelectric efficiency. However, what is less well understood is the precise role of electronic and lattice transport coefficients in the improvement. We differentiate and analyze the electronic and lattice contributions to the enhancement by using a nearly parameter-free theory of the thermoelectric properties of semiconductor nanowires. By combining molecular dynamics, density functional theory, and Boltzmann transport theory methods, we provide a complete picture for the competing factors of thermoelectric figure of merit. As an example, we study the thermoelectric properties of ZnO and Si nanowires. We find that the figure of merit can be increased as much as 30 times in 8-Å-diameter ZnO nanowires and 20 times in 12-Å-diameter Si nanowires, compared with the bulk. Decoupling of thermoelectric contributions reveals that the reduction of lattice thermal conductivity is the predominant factor in the improvement of thermoelectric properties in nanowires. While the lattice contribution to the efficiency enhancement consistently becomes larger with decreasing size of nanowires, the electronic contribution is relatively small in ZnO and disadvantageous in Si.

Hydrogen-carbon complexes and the blue luminescence band in GaN

The blue luminescence band with a maximum at 3.0 eV and the zero-phonon line at 3.33 eV (labeled BL2) is observed in high-resistivity GaN. Under prolonged ultraviolet (UV) light exposure, the BL2 band transforms into the yellow luminescence (YL) band with a maximum at 2.2 eV. Our hybrid functional calculations suggest that the BL2 band is related to a hydrogen-carbon defect complex, either CNON-Hi or CN-Hi. The complex creates defect transition level close to the valence band, which is responsible for the BL2 band. Under UV illumination, the complex dissociates, leaving as byproduct the source of the YL band (CNON or CN) and interstitial hydrogen.

Electron spin polarization in resonant interband tunneling devices

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ Ga x Mn 1 - x Sb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin-polarized electrons injected into bulk InAs make spin-resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

BexMgyZn1−x−yO semiconductor solid solutions are attractive for UV optoelectronics and electronic devices owing to their wide bandgap and capability of lattice-matching to ZnO. In this work, a combined experimental and theoretical study of lattice parameters, bandgaps, and underlying electronic properties, such as changes in band edge wavefunctions in BexMgyZn1−x−yO thin films, is carried out. Theoretical ab initio calculations predicting structural and electronic properties for the whole compositional range of materials are compared with experimental measurements from samples grown by plasma assisted molecular beam epitaxy on (0001) sapphire substrates. The measured a and c lattice parameters for the quaternary alloys BexMgyZn1−x with x = 0−0.19 and y = 0–0.52 are within 1%–2% of those calculated using generalized gradient approximation to the density functional theory. Additionally, composition independent ternary BeZnO and MgZnO bowing parameters were determined for a and c lattice parameters and the b...

Localized Electron States Near a Metal-Semiconductor Nanocontact

The electronic structure of nanowires in contact with metallic electrodes of experimentally relevant sizes is calculated by incorporating the electrostatic image potential into the atomistic single particle Schrödinger equation. We show that the presence of an electrode produces localized electron/hole states near the electrode. We found a strong nanowire size dependence of this localization effect. We calculate several electrode/nanowire geometries, with varying contact depths and nanowire radii. We demonstrate the change in the band gap of up to 0.5 eV in 3 nm diameter CdSe nanowires and calculate the magnitude of the applied electric field necessary to overcome the localization.

Ultra-small Ge1−xSnx quantum dots with visible photoluminescence

Ge1-xSnx alloy quantum dots (QDs) were synthesized with sizes ranging from 1-3 nm exhibiting visible orange-red photoluminescence. Composition dependent optical properties were characterized and supported by theoretical calculations. Structural analysis suggests the QDs are diamond cubic phase, characteristic of Ge1-xSnx thin films and nanocrystals (NCs) reported to date.

Electronic Structure of Transition-Metal Dicyanamides Me(N(CN)2)2 (Me = Mn, Fe, Co, Ni, Cu)

The electronic structure of Me[N(CN)