Di-Son Kuo

Influence of source coupling on the programming and degradation mechanisms of split-gate flash memory devices

In this paper, the mechanism of programming operation considering the source-to-floating gate coupling ratio (SCR) in split-gate source-side injected flash memory has been discussed and experimentally demonstrated. The effects of SCR on the programming performance and cycling endurance have also been investigated in detail. The experimental results indicate that the cell with higher SCR possesses a higher programming speed. Under the same programming speed, the higher-SCR cell shows larger cycling endurance compared to lower-SCR cell.

A novel programming technique for highly scalable and disturbance immune flash EEPROM

Abstract The program speed of a selected cell and the program disturbance of unselected cells sharing the common program-line in split-gate source-side injected flash memory has been investigated. It is found that the program disturbance becomes severe as the control gate length decreases. In this letter, we first propose a novel program technique by applying a negative bias to inhibited word-line to improve the trade-off between program speed and program disturbance. The experimental results indicate that the new program technique is a good candidate for future high-density, high-disturbance-immunity flash EEPROM memory applications.