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Dive into the research topics where Dokyun Son is active.

Publication


Featured researches published by Dokyun Son.


Journal of Semiconductor Technology and Science | 2016

3D TCAD Analysis of Hot-Carrier Degradation Mechanisms in 10 nm Node Input/Output Bulk FinFETs

Dokyun Son; Sangbin Jeon; Myounggon Kang; Hyungcheol Shin

In this paper, we investigated the hotcarrier injection (HCI) mechanism, one of the most important reliability issues, in 10 nm node Input/Output (I/O) bulk FinFET. The FinFET has much intensive HCI damage in Fin-bottom region, while the HCI damage for planar device has relatively uniform behavior. The local damage behavior in the FinFET is due to the geometrical characteristics. Also, the HCI is significantly affected by doping profile, which could change the worst HCI bias condition. This work suggested comprehensive understanding of HCI mechanisms and the guideline of doping profile in 10 nm node I/O bulk FinFET.


IEEE Transactions on Electron Devices | 2018

Analysis of Electrothermal Characteristics of GAA Vertical Nanoplate-Shaped FETs

Dokyun Son; Ilho Myeong; Hyunsuk Kim; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin


IEEE Transactions on Electron Devices | 2018

Analysis on Self-Heating Effects in Three-Stacked Nanoplate FET

Hyunsuk Kim; Dokyun Son; Ilho Myeong; Myounggon Kang; Jongwook Jeon; Hyungcheol Shin


ieee silicon nanoelectronics workshop | 2017

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

Kyul Ko; Dokyun Son; Myounggon Kang; Hyungcheol Shin


ieee silicon nanoelectronics workshop | 2017

Analysis of self-heating effects in vertical MOSFETs according to device geometry

Ilho Myeong; Dokyun Son; Hyunsuk Kim; Myounggon Kang; Hyungcheol Shin


ieee silicon nanoelectronics workshop | 2017

In-depth analysis of self-heating effects in vertical nanoplate-shaped GAAFETs

Dokyun Son; Ilho Myeong; Hyunsuk Kim; Myounggon Kang; Hyungcheol Shin


ieee silicon nanoelectronics workshop | 2017

Analysis on self heating effects in nanowire ΓΕΤ considering effective thermal conductivity of BEOL

Hyunsuk Kim; Dokyun Son; Ilho Myoung; Myounggon Kang; Hyungcheol Shin


ieee silicon nanoelectronics workshop | 2017

Improvement of dual-Λ spacer for nanowire-FETs considering circuit delay and electricstatic controllability

Hyungwoo Ko; Jongsu Kim; Dokyun Son; Myounggon Kang; Hyungcheol Shin


Solid-state Electronics | 2017

Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability

Kyul Ko; Dokyun Son; Myounggon Kang; Hyungcheol Shin


Solid-state Electronics | 2017

Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation

Ilho Myeong; Dokyun Son; Hyunsuk Kim; Myounggon Kang; Hyungcheol Shin

Collaboration


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Hyungcheol Shin

Seoul National University

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Hyunsuk Kim

Seoul National University

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Ilho Myeong

Seoul National University

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Kyul Ko

Seoul National University

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Changbeom Woo

Seoul National University

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Sangbin Jeon

Seoul National University

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Duckseoung Kang

Seoul National University

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