Cesare G. E. Alfieri

High-power 100 fs semiconductor disk lasers

Optically pumped passively modelocked semiconductor disk lasers (SDLs) provide superior performance in average output power, a broad range of operation wavelengths, and reduced complexity. Here, we present record performance with high average power and pulse durations as short as 100 fs with a semiconductor saturable absorber mirror (SESAM) modelocked vertical external-cavity surface-emitting laser (VECSEL) at a center wavelength of 1034 nm. A comprehensive pulse characterization confirms fundamental modelocking with a close to transform-limited output pulse of 128 fs and with negatively chirped output pulses as short as 107 fs, which are externally compressed to 96 fs with a single path through a 2-mm-thick ZnSe plate. For the “96 fs result” the pulse repetition rate is 1.6 GHz, the average output power is 100 mW, and the pulse peak power is 560 W. The transform-limited optical spectrum could in principle support pulses as short as 65 fs with higher order dispersion compensation. We measured the most relevant spectral and nonlinear VECSEL and SESAM parameters and used them as input parameters for our pulse formation simulations. These simulations agree well with our experimental results and provide an outlook for further performance scaling of ultrafast SDL technology.

Optimized SESAMs for kilowatt-level ultrafast lasers

We present a thorough investigation of surface deformation and thermal properties of high-damage threshold large-area semiconductor saturable absorber mirrors (SESAMs) designed for kilowatt average power laser oscillators. We compare temperature rise, thermal lensing, and surface deformation of standard SESAM samples and substrate-removed SESAMs contacted using different techniques. We demonstrate that for all cases the thermal effects scale linearly with the absorbed power, but the contacting technique critically affects the strength of the temperature rise and the thermal lens of the SESAMs (i.e. the slope of the linear change). Our best SESAMs are fabricated using a novel substrate-transfer direct bonding technique and show excellent surface flatness (with non-measureable radii of curvature (ROC), compared to astigmatic ROCs of up to 10 m for standard SESAMs), order-of-magnitude improved heat removal, and negligible deformation with absorbed power. This is achieved without altering the saturation behavior or the recovery parameters of the samples. These SESAMs will be a key enabling component for the next generation of kilowatt-level ultrafast oscillators.

Optical efficiency and gain dynamics of modelocked semiconductor disk lasers

Compact optically pumped passively modelocked semiconductor disk lasers (SDLs) based on active quantum wells (QWs) such as vertical external-cavity surface-emitting lasers (VECSELs) or modelocked integrated external-cavity surface-emitting lasers (MIXSELs) are wavelength-versatile sources that offer a unique combination of gigahertz pulse repetition rates and short pulse durations. In this paper, we present record-short pulses of 184 fs from a gigahertz MIXSEL emitting at a center wavelength of 1048 nm. This result comes at the expense of low optical-to-optical pump efficiency (<1%) and average output power limited to 115 mW. We experimentally observe that shorter pulses significantly reduce the macroscopic gain saturation fluence and develop a QW model based on rate equations to reproduce the gain saturation behavior and quantitatively explain the VECSEL and MIXSEL modelocking performances. We identify spectral hole burning as the main cause of the reduced gain at shorter pulse durations, which in combination with the short lifetime of the excited carriers strongly reduces the optical pump efficiency. Our better understanding will help to address these limitations in future ultrafast SDL designs.

First investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser

We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard f-to-2f interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ∼300  kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future.

Pulse shortening of an ultrafast VECSEL

Ultrafast, optically pumped, passively modelocked vertical external-cavity surface-emitting lasers (VECSELs) are excellent sources for industrial and scientific applications that benefit from compact semiconductor based high-power ultrafast lasers with gigahertz repetition rates and excellent beam quality. Applications such as self-referenced frequency combs and multi-photon imaging require sub-200-fs pulse duration combined with high pulse peak power. Here, we present a semiconductor saturable absorber mirror (SESAM) modelocked VECSEL with a pulse duration of 147 fs and 328 W of pulse peak power. The average output power was 100 mW with a repetition rate of 1.82 GHz at a center wavelength of 1034 nm. The laser has optimal beam quality operating in a fundamental transverse mode with a M2 value of <1.05 in both orthogonal directions. The VECSEL was grown by metal-organic vapor phase epitaxy (MOVPE) with five pairs of strain-compensated InGaAs quantum wells (QWs). The QWs are placed symmetrical around the antinodes of the standing electric field at a reduced average field enhancement in the QWs of ≈ 0.5 (normalized to 4 outside the structure). These results overcome the trade-off between pulse duration and peak power of the state-of-the-art threshold values of 4.35 kW peak power for a pulse duration of 400 fs and 3.3 W peak power for a pulse duration of 107 fs.

High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers

Self-assembled quantum dots (QDs) as active media for ultrafast semiconductor disk laser offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on the shortest pulses and the highest pulse peak power from an optically pumped vertical external cavity surface emitting laser (VECSEL) based on QDs and optimized for passive modelocking at 1035 nm using a semiconductor saturable absorber mirror. We demonstrate 216-fs pulses with an average output power of 269 mW at a pulse repetition rate of 2.77 GHz and 396 W peak power. At a lower pulse repetition rate of 1.67 GHz, we achieve 193-fs pulses with 112 mW of average output power. We remark a higher optical-to-optical pump efficiency compared to our previous QW VECSELs in the sub-300-fs regime. This is further confirmed by a comparative analysis of the saturation recovery which reveals longer carrier lifetimes for the QD compared to QW VECSELs.

High-power semiconductor disk lasers with record-short pulse durations

Optically pumped ultrafast semiconductor disk lasers (SDLs), such as vertical external-cavity surface-emitting lasers (VECSELs, [1]) or modelocked integrated external-cavity surface-emitting lasers (MIXSELs, [2]), are compact high-power gigahertz lasers with excellent beam quality. Since the first demonstration of a semiconductor saturable absorber mirror (SESAM, [3]) modelocked VECSEL [4], the performance of SDLs has been constantly improved and shows a clear trend towards shorter pulse durations and higher output powers (Fig. 1a and b) [5]. The targeted applications of these ultrafast gigahertz SDLs benefit from pulse durations of hundreds of femtoseconds combined with high pulse peak power and comprise, among others, telecommunication, multiphoton imaging, and frequency metrology.

Coherent beam combining and noise analysis of a colliding pulse modelocked VECSEL

Optically-pumped SESAM-modelocked semiconductor disk lasers have become interesting ultrafast lasers with gigahertz pulse repetition rates, high average power and adjustable lasing wavelength. It is well established that colliding pulse modelocking (CPM) can generate both shorter pulses and improved stability. These improvements however typically come at the expense of a more complex ring cavity and two output beams. So far similar modelocking results have been obtained with CPM vertical external-cavity surface-emitting lasers (VECSELs) and with SESAM-modelocked VECSELs or modelocked integrated external-cavity surface-emitting lasers (MIXSELs) in a linear cavity. However coherent beam combining of the two output beams of a CPM VECSEL could result in a significantly higher peak power. This is interesting for example for applications in biomedical microscopy and frequency metrology. Here we demonstrate with a more detailed noise analysis that for both output beams of a CPM VECSEL the pulse repetition rates and the carrier envelope offset frequencies are locked to each other. In contrast to standard SESAM-modelocked VECSELs in a linear cavity, we only have been able to actively stabilize the pulse repetition rate of the CPM VECSEL by cavity length control and not by pump-power control. Furthermore, a first coherent beam combining experiment of the two output beams is demonstrated.

Ultrafast semiconductor disk lasers

The performance of ultrafast semiconductor disk lasers rapidly advanced over the last decades. The strong interest from industry for inexpensive, compact and reliable ultrafast laser sources in the picosecond and femtosecond domain has driven this technology towards commercial products. Frequency metrology and biomedical applications greatly benefit from sub-200 femtosecond pulse durations with peak powers in the kilowatt range. The aim of this review is to briefly describe the application potential and to give an overview of the current status of modelocked semiconductor disk lasers. Particular focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers.

High-power 100-fs SESAM-modelocked VESCEL (Conference Presentation)

Ultrafast vertical external-cavity surface-emitting lasers (VECSELs) are versatile laser sources and feature high-power operation. To date the best modelocking results have been achieved with a semiconductor saturable absorber mirror (SESAM). Ultrafast optically pumped semiconductor disk lasers (SDLs) are compact, cost-efficient and provide excellent beam quality at gigahertz pulse repetition rates for applications such as for example multi-photon imaging, ultrafast communication and in particular self-referenced gigahertz frequency combs. The highest peak power obtained with an ultrafast VECSEL is 4.35 kW in 400-fs pulses and the shortest pulses until now are 107 fs at 3 mW average output power. Here we present a SESAM-modelocked VECSEL with pulses as short as 96 fs and 100 mW average output power. These are to the best of our knowledge the shortest pulses achieved by a fundamentally modelocked SDL and result in a very high peak power of 0.56 kW at a pulse repetition rate of 1.63 GHz. The short pulse duration was achieved by introducing a small amount of positive group delay dispersion with a single path through an external 2-mm thick ZnSe window plate that compensated the initially negatively chirped 107-fs output pulses. Currently the power is limited by the transition from fundamental modelocking to multi-pulse operation, which reduces the pulse peak power and introduces additional noise. Therefore, we present a study of the multi-pulse behavior of the high-power 100-fs SDL resulting from the complex modelocking mechanism. This study also provides an insight into special issues of pulse characterization that may suggest stable fundamental modelocking even if this is not the case.