Sandro M. Link

Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser.

The high-power semiconductor laser studied here is a modelocked integrated external-cavity surface emitting laser (MIXSEL), which combines the gain of vertical-external-cavity surface-emitting lasers (VECSELs) with the saturable absorber of a semiconductor saturable absorber mirror (SESAM) in a single semiconductor layer stack. The MIXSEL concept allows for stable and self-starting fundamental passive modelocking in a simple straight cavity and the average power scaling is based on the semiconductor disk laser concept. Previously record-high average output power from an optically pumped MIXSEL was demonstrated, however the long pulse duration of 17 ps prevented higher pulse repetition rates and many interesting applications such as supercontinuum generation and broadband frequency comb generation. With a novel MIXSEL structure, the first femtosecond operation was then demonstrated just recently. Here we show that such a MIXSEL can also support pulse repetition rate scaling from ≈5 GHz to >100 GHz with excellent beam quality and high average output power, by mechanically changing the cavity length of the linear straight cavity and the output coupler. Up to a pulse repetition rate of 15 GHz we obtained average output power >1 W and pulse durations <4 ps. Furthermore we have been able to demonstrate the highest pulse repetition rate from any fundamentally modelocked semiconductor disk laser with 101.2 GHz at an average output power of 127 mW and a pulse duration of 570 fs.

Gigahertz self-referenceable frequency comb from a semiconductor disk laser

We present a 1.75-GHz self-referenceable frequency comb from a vertical external-cavity surface-emitting laser (VECSEL) passively modelocked with a semiconductor saturable absorber mirror (SESAM). The VECSEL delivers 231-fs pulses with an average power of 100 mW and is optimized for stable and reliable operation. The optical spectrum was centered around 1038 nm and nearly transform-limited with a full width half maximum (FWHM) bandwidth of 5.5 nm. The pulses were first amplified to an average power of 5.5 W using a backward-pumped Yb-doped double-clad large mode area (LMA) fiber and then compressed to 85 fs with 2.2 W of average power with a passive LMA fiber and transmission gratings. Subsequently, we launched the pulses into a highly nonlinear photonic crystal fiber (PCF) and generated a coherent octave-spanning supercontinuum (SC). We then detected the carrier-envelope offset (CEO) frequency (f(CEO)) beat note using a standard f-to-2f-interferometer. The f(CEO) exhibits a signal-to-noise ratio of 17 dB in a 100-kHz resolution bandwidth and a FWHM of ≈10 MHz. To our knowledge, this is the first report on the detection of the f(CEO) from a semiconductor laser, opening the door to fully stabilized compact frequency combs based on modelocked semiconductor disk lasers.

Femtosecond pulses from a modelocked integrated external-cavity surface emitting laser (MIXSEL).

Novel surface-emitting optically pumped semiconductor lasers have demonstrated >1 W modelocked and >100 W continuous wave (cw) average output power. The modelocked integrated external-cavity surface emitting laser (MIXSEL) combines the gain of vertical-external-cavity surface-emitting lasers (VECSELs) with the saturable absorber of a semiconductor saturable absorber mirror (SESAM) in one single semiconductor structure. This unique concept allows for stable and self-starting passive modelocking in a simple straight cavity. With quantum-dot based absorbers, record-high average output power was demonstrated previously, however the pulse duration was limited to 17 ps so far. Here, we present the first femtosecond MIXSEL emitting pulses with a duration as short as 620 fs at 4.8 GHz repetition rate and 101 mW average output power. The novel MIXSEL structure relies on a single low temperature grown quantum-well saturable absorber with a low saturation fluence and fast recovery dynamics. A detailed characterization of the key modelocking parameters of the absorber and the challenges for absorber integration into the MIXSEL structure are discussed.

High-power 100 fs semiconductor disk lasers

Optically pumped passively modelocked semiconductor disk lasers (SDLs) provide superior performance in average output power, a broad range of operation wavelengths, and reduced complexity. Here, we present record performance with high average power and pulse durations as short as 100 fs with a semiconductor saturable absorber mirror (SESAM) modelocked vertical external-cavity surface-emitting laser (VECSEL) at a center wavelength of 1034 nm. A comprehensive pulse characterization confirms fundamental modelocking with a close to transform-limited output pulse of 128 fs and with negatively chirped output pulses as short as 107 fs, which are externally compressed to 96 fs with a single path through a 2-mm-thick ZnSe plate. For the “96 fs result” the pulse repetition rate is 1.6 GHz, the average output power is 100 mW, and the pulse peak power is 560 W. The transform-limited optical spectrum could in principle support pulses as short as 65 fs with higher order dispersion compensation. We measured the most relevant spectral and nonlinear VECSEL and SESAM parameters and used them as input parameters for our pulse formation simulations. These simulations agree well with our experimental results and provide an outlook for further performance scaling of ultrafast SDL technology.

Dual-comb modelocked laser

In this paper we present the first semiconductor disk laser (SDL) emitting simultaneously two collinearly overlapping cross-polarized gigahertz modelocked pulse trains with different pulse repetition rates. Using only a simple photo detector and a microwave spectrum analyzer directly down-converts the frequency comb difference from the optical to the microwave frequency domain. With this setup, the relative carrier-envelope-offset (CEO) frequency can be accessed directly without an f-to2f interferometer. A very compact design is obtained using the modelocked integrated external-cavity surface emitting laser (MIXSEL) which is part of the family of optically pumped SDLs and similar to a vertical external cavity surface emitting laser (VECSEL) but with both gain and saturable absorber integrated into the same semiconductor wafer (i.e. MIXSEL chip). We then simply added an additional intracavity birefringent crystal inside the linear straight cavity between the output coupler and the MIXSEL chip which splits the cavity beam into two collinear but spatially separated cross-polarized beams on the MIXSEL chip. This results in two modelocked collinear and fully overlapping cross-polarized output beams with adjustable pulse repetition frequencies with excellent noise performance. We stabilized both pulse repetition rates of the dual comb MIXSEL.

Amplitude Noise and Timing Jitter Characterization of a High-Power Mode-Locked Integrated External-Cavity Surface Emitting Laser

We present a timing jitter and amplitude noise characterization of a high-power mode-locked integrated external-cavity surface emitting laser (MIXSEL). In the MIXSEL, the semiconductor saturable absorber of a SESAM is integrated into the structure of a VECSEL to start and stabilize passive mode-locking. In comparison to previous noise characterization of SESAM-mode-locked VECSELs, this first noise characterization of a MIXSEL is performed at a much higher average output power. In a free-running operation, the laser generates 14.3-ps pulses at an average output power of 645 mW at a 2-GHz pulse repetition rate and an RMS amplitude noise of 0.15% [1 Hz, 10 MHz]. We measured an RMS timing jitter of 129 fs [100 Hz, 10 MHz], which represents the lowest value for a free-running passively mode-locked semiconductor disk laser to date. Additionally, we stabilized the pulse repetition rate with a piezo actuator to control the cavity length. With the laser generating 16.7-ps pulses at an average output power of 701 mW, the repetition frequency was phase-locked to a low-noise electronic reference using a feedback loop. In actively stabilized operation, the RMS timing jitter was reduced to less than 70 fs [1 Hz, 100 MHz]. In the 100-Hz to 10-MHz bandwidth, we report the lowest timing jitter measured from a passively mode-locked semiconductor disk laser to date with a value of 31 fs. These results show that the MIXSEL technology provides compact ultrafast laser sources combining high-power and low-noise performance similar to diode-pumped solid-state lasers, which enable world-record optical communication rates and low-noise frequency combs.

Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser

The slight differences between two optical frequency combs from the same laser source capture precise microwave intervals. Two different combs from a single source Combs of light divide the optical frequency spectrum into closely spaced tines that can measure molecular absorption spectra with exceptional precision. One appealing method to extend this precision down into the microwave regime is to simultaneously use two slightly distinct combs that differ in spacing by the magnitude of a microwave frequency. The challenge is ensuring that the combs remain synchronized. Link et al. solve this problem by generating both combs from the same semiconductor laser source. The resultant dual comb delivers highly accurate spectra of water vapor, and the approach could be generalized across the optical spectrum by tuning the semiconductor source. Science, this issue p. 1164 Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications.

Dual-gain SESAM modelocked thin disk laser based on Yb:Lu 2 O 3 and Yb:Sc 2 O 3

We present for the first time a SESAM-modelocked thin-disk laser (TDL) that incorporates two gain materials with different emission spectra in a single TDL resonator. The two gain media used in this experiment are the sesquioxide materials Yb:Lu2O3 and Yb:Sc2O3, which have their spectral emission peak displaced by ≈7 nm. We can benefit from a combined gain bandwidth that is wider than the one provided by a single gain material alone and still conserve the excellent thermal properties of each disk. In these first proof-of-principle experiments we demonstrate pulse durations shorter than previously achieved with the single gain material Yb:Lu2O3. The oscillator generates pulses as short as 103 fs at a repetition rate of 41.7 MHz and a center wavelength of around 1038 nm, with an average output power of 1.4 W. A different cavity layout provides pulses with a duration of 124 fs at an output power of 8.6 W. This dual-gain approach should allow for further power scaling of TDLs and these first results prove this method to be a promising new way to combine the record output-power performance of modelocked TDLs with short pulse durations in the sub-100 fs regime.

Dual-comb modelocked lasers: semiconductor saturable absorber mirror decouples noise stabilization.

In this paper we present the stabilization of the pulse repetition rate of dual-comb lasers using an intracavity semiconductor saturable absorber mirror (SESAM) for passive modelocking and an intracavity birefringent crystal for polarization-duplexing to obtain simultaneous emission of two modelocked beams from the same linear cavity sharing all components. Initially surprising was the observation that the cavity length adjustments to stabilize one polarization did not significantly affect the pulse repetition rate of the other. We gained insight in the underlying physics using both a semiconductor and Nd:YAG laser gain material with the conclusion that the pulse arrival timing jitter of the two beams is decoupled by the uncorrelated time delay from the saturated SESAM and becomes locked with sufficient but not too much pulse overlap. Noise stabilization is in all cases still possible for both combs. The dual-comb modelocked laser is particularly interesting for the semiconductor laser enabling the integration of gain and absorber layers within one wafer (referred to as the modelocked integrated external-cavity surface emitting laser--MIXSEL).

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.