Dong-Gyun Han

Effect of Ashing, Strip and Annealing Process on the Dopant Concentration of Silicon

Introduction Silicon has been used successfully for semiconductor material because it can have a high degree of purity at a low cost, and shows the good mechanical, chemical and electrical properties. In the respect of electrical properties, the pure silicon is an insulator, thus the ion implantation process is necessary to make insulating silicon into semiconductor. Generally, the electrical properties of silicon based semiconductors are determined by the characteristics of dopant. Hence the study for the change of dopants concentration in following process such as ashing, strip, and annealing, is very important. (Shown in Figure 1.) In this study, we will discuss about the loss of dopant by strip process using fluorine-based stripper and annealing.