Dong-Ryul Chang | Researchain

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Featured researches published by Dong-Ryul Chang.

international semiconductor conference | 2008

A novel fermi level controlled High Voltage Transistor preventing sub-threshold hump

Byoung-Chul Park; Sung-young Lee; Dong-Ryul Chang; Kee-In Bang; Sung-Jun Kim; Sang-Bae Yi; Eunseung Jung

In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi leve controlled HVT (FCHVT) to simply eliminate hump effects.

international conference on solid-state and integrated circuits technology | 2008

A Fermi Level Controlled High Voltage Transistor preventing subthreshold hump

Byoung-Chul Park; Sung-young Lee; Dong-Ryul Chang; Kee-In Bang; Sung-Jun Kim; Sang-Bae Yi; Eunseung Jung

In High Voltage Transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi Level Controlled HVT (FCHVT) to simply eliminate hump effects.

Archive | 2007