Elad Alon

A 90 nm CMOS Low-Power 60 GHz Transceiver With Integrated Baseband Circuitry

This paper presents a low power 60 GHz transceiver that includes RF, LO, PLL and BB signal paths integrated into a single chip. The transceiver has been fabricated in a standard 90 nm CMOS process and includes specially designed ESD protection on all mm-wave pads. With a 1.2 V supply the chip consumes 170 mW while transmitting 10 dBm and 138 mW while receiving. Data transmission up to 5 Gb/s on each of I and Q channels has been measured, as has data reception over a 1 m wireless link at 4 Gb/s QPSK with less than 10-11 BER.

Scaling, power, and the future of CMOS

This paper briefly reviews the forces that caused the power problem, the solutions that were applied, and what the solutions tell us about the problem. As systems became more power constrained, optimizing the power became more critical; viewing power reduction from an optimization perspective provides valuable insights. Section III describes these insights in more detail, including why Vdd and Vth have stopped scaling. Section IV describes some of the low power techniques that have been used in the past in the context of the optimization framework. This framework also makes it easy to see the impact of variability, which is discussed in more detail in section V along with the adaptive mechanisms that have been proposed and deployed to minimize the energy cost. Section VI describes possible strategies for dealing with the slowdown in gate energy scaling, and the final section concludes by discussing the implications of these strategies for device designers

The implementation of a 2-core, multi-threaded itanium family processor

The design of the high end server processor code named Montecito incorporated several ambitious goals requiring innovation. The most obvious being the incorporation of two legacy cores on-die and at the same time reducing power by 23%. This is an effective 325% increase in MIPS per watt which necessitated a holistic focus on power reduction and management. The next challenge in the implementation was to ensure robust and high frequency circuit operation in the 90-nm process generation which brings with it higher leakage and greater variability. Achieving this goal required new methodologies for design, a greatly improved and tunable clock system and a better understanding of our power grid behavior all of which required new circuits and capabilities. The final aspect of circuit design improvement involved the I/O design for our legacy multi-drop system bus. To properly feed the two high frequency cores with memory bandwidth we needed to ensure frequency headroom in the operation of the bus. This was achieved through several innovations in controllability and tuning of the I/O buffers which are discussed as well.

Design Techniques for Fully Integrated Switched-Capacitor DC-DC Converters

This paper describes design techniques to maximize the efficiency and power density of fully integrated switched-capacitor (SC) DC-DC converters. Circuit design methods are proposed to enable simplified gate drivers while supporting multiple topologies (and hence output voltages). These methods are verified by a proof-of-concept converter prototype implemented in 0.374 mm2 of a 32 nm SOI process. The 32-phase interleaved converter can be configured into three topologies to support output voltages of 0.5 V-1.2 V from a 2 V input supply, and achieves 79.76% efficiency at an output power density of 0.86 W/mm2 .

Ultra-efficient 10Gb/s hybrid integrated silicon photonic transmitter and receiver

Using low parasitic microsolder bumping, we hybrid integrated efficient photonic devices from different platforms with advanced 40 nm CMOS VLSI circuits to build ultra-low power silicon photonic transmitters and receivers for potential applications in high performance inter/intra-chip interconnects. We used a depletion racetrack ring modulator with improved electro-optic efficiency to allow stepper optical photo lithography for reduced fabrication complexity. Integrated with a low power cascode 2 V CMOS driver, the hybrid silicon photonic transmitter achieved better than 7 dB extinction ratio for 10 Gbps operation with a record low power consumption of 1.35 mW. A received power penalty of about 1 dB was measured for a BER of 10(-12) compared to an off-the-shelf lightwave LiNOb3 transmitter, which comes mostly from the non-perfect extinction ratio. Similarly, a Ge waveguide detector fabricated using 130 nm SOI CMOS process was integrated with low power VLSI circuits using hybrid bonding. The all CMOS hybrid silicon photonic receiver achieved sensitivity of -17 dBm for a BER of 10(-12) at 10 Gbps, consuming an ultra-low power of 3.95 mW (or 395 fJ/bit in energy efficiency). The scalable hybrid integration enables continued photonic device improvements by leveraging advanced CMOS technologies with maximum flexibility, which is critical for developing ultra-low power high performance photonic interconnects for future computing systems.

Integrated circuit design with NEM relays

To overcome the energy-efficiency limitations imposed by finite sub-threshold slope in CMOS transistors, this paper explores the design of integrated circuits based on nano-electro-mechanical (NEM) relays. A dynamical Verilog-A model of the NEM relay is described and correlated to device measurements. Using this model we explore NEM relay design strategies for digital logic and I/O that can significantly improve the energy efficiency of the whole VLSI system. By exploiting the low effective threshold voltage and zero leakage achievable with these relays, we show that NEM relay-based adders can achieve an order of magnitude or more improvement in energy efficiency over CMOS adders with ns-range delays and with no area penalty. By applying parallelism, this improvement in energy-efficiency can be achieved at higher throughputs as well, at the cost of increased area. Similar improvements in high-speed I/O energy are also predicted by making use of the relays to implement highly energy-efficient digital-to-analog and analog-to-digital converters.

Replica compensated linear regulators for supply-regulated phase-locked loops

Supply-regulated phase-locked loops rely upon the VCO voltage regulator to maintain a low sensitivity to supply noise and hence low overall jitter. By analyzing regulator supply rejection, we show that in order to simultaneously meet the bandwidth and low dropout requirements, previous regulator implementations used in supply-regulated PLLs suffer from unfavorable tradeoffs between power supply rejection and power consumption. We therefore propose a compensation technique that places the regulators amplifier in a local replica feedback loop, stabilizing the regulator by increasing the amplifier bandwidth while lowering its gain. Even though the forward gain of the amplifier is reduced, supply noise affects the replica output in addition to the actual output, and therefore the amplifiers gain to reject supply noise is effectively restored. Analysis shows that for reasonable mismatch between the replica and actual loads, regulator performance is uncompromised, and experimental results from a 90 nm SOI test chip confirm that with the same power consumption, the proposed regulator achieves at least 4 dB higher supply rejection than the previous regulator design. Furthermore, simulations show that if not for other supply rejection-limiting components in the PLL, the supply rejection improvement of the proposed regulator is greater than 15 dB.

A 32nm fully integrated reconfigurable switched-capacitor DC-DC converter delivering 0.55W/mm 2 at 81% efficiency

With the rising integration levels used to increase digital processing performance, there is a clear need for multiple independent on-chip supplies in order to support per-IP or block power management. Simply adding multiple off-chip DCDC converters is not only difficult due to supply impedance concerns, but also adds cost to the platform by increasing motherboard size and package complexity. There is therefore a strong motivation to integrate voltage conversion blocks on the silicon chip.

The Road to Fully Integrated DC–DC Conversion via the Switched-Capacitor Approach

This paper provides a perspective on progress toward realization of efficient, fully integrated dc-dc conversion and regulation functionality in CMOS platforms. In providing a comparative assessment between the inductor-based and switched-capacitor approaches, the presentation reviews the salient features in effectiveness in utilization of switch technology and in use and implementation of passives. The analytical conclusions point toward the strong advantages of the switched-capacitor (SC) approach with respect to both switch utilization and much higher energy densities of capacitors versus inductors. The analysis is substantiated with a review of recently developed and published integrated dc-dc converters of both the inductor-based and SC types.

Mechanical Computing Redux: Relays for Integrated Circuit Applications

Power density has grown to be the dominant challenge for continued complementary metal-oxide-semiconductor (CMOS) technology scaling. Together with recent improvements in microrelay design and process technology, this has led to renewed interest in mechanical computing for ultralow-power integrated circuit (IC) applications. This paper provides a brief history of mechanical computing followed by an overview of the various types of micromechanical switches, with particular emphasis on electromechanical relays since they are among the most promising for IC applications. Relay reliability and process integration challenges are discussed. Demonstrations of functional relay logic circuits are then presented, and relay scaling for improved device density and performance is described. Finally, the energy efficiency benefit of a scaled relay technology versus a CMOS technology with comparable minimum dimensions is assessed.