Emily Y. Shu

Numerical and experimental studies of pellicle-induced photomask distortions

Meeting the stringent error budget of 157-nm lithography for manufacturing devices in the sub-100 nm regime requires that all mask-related distortions be minimized, corrected, or eliminated. Sources include the pellicle system, which has been previously identified as a potential cause of image placement error. To characterize pellicle-induced distortions, finite element (FE) models have been developed to simulate system fabrication, including soft pellicles as well as prototype fused silica (hard) pellicles. The main sources of distortions are: (a) temperature variations, (b) initially distorted components, and (c) sag-induced refraction. Temperature variations are an issue if pellicle mounting and exposure take place at different temperatures. Sources of attachment-induced distortions include the initial frame curvature, initial reticle shape, attachment method (mounting tools-induced), frame and gasket materials, and the hard pellicle bow. These attachment-induced distortions were modeled using experimentally measured values of Youngs modulus for adhesive gaskets. Refraction aberration is an issue with bowed hard pellicles which act as optical elements and induce image degradation. These effects were assessed and found to be significant. Results from the experiments and comprehensive FE simulations have characterized the relative importance of the principal sources of pellicle-induced photomask distortions for 157-nm lithography.

EUV Mask Process Development and Integration

It becomes increasingly important to have an integrated process for Extreme UltraViolet (EUV) mask fabrication in order to meet all the requirements for the 32 nm technology node and beyond. Intel Corporation established the EUV mask pilot line by introducing EUV-specific tool sets while capitalizing on the existing photomask technology and utilizing the standard photomask equipment and processes in 2004. Since then, significant progress has been made in many areas including absorber film deposition, mask patterning optimization, mask blank and patterned mask defect inspection, pattern defect repair, and EUV mask reflectivity metrology. In this paper we will present the EUV mask process with the integrated solution and the results of the mask patterning process, Ta-based in-house absorber film deposition, absorber dry etch optimization, EUV mask pattern defect inspection, absorber defect repair, and mask reflectivity performance. The EUV resist wafer print using the test masks that are fabricated in the EUV mask pilot line will be discussed as well.

Experimental and numerical studies of the effects of materials and attachment conditions on pellicle induced distortions in advanced photomasks

Lithography registration errors induced by the attachment of soft pellicles on reticles can significantly affect wafer overlay performance for sub-100 nm lithography chip manufacturing. Intel Corporation and the University of Wisconsin have conducted an extensive study to identify the various sources of pellicle-induced distortions and methods for error reduction in order to meet advanced mask manufacturing requirements. In this study, pellicle attachment processes and system materials were evaluated to determine the effects on image placement accuracy. In particular, the in-plane distortions due to the pellicle attachment technique, pellicle frame flatness, frame adhesive, and environmental temperature were characterized. At Intel, pellicles were attached to a test reticle with a 21 X 21 array of grid points. Registration measurements were conducted before and after pellicle attachment using an optical distance metrology system. A comprehensive finite element model was developed at the University of Wisconsin to assess the contributions to pellicle-induced distortions from individual components of the pellicle system. Pellicle frame flatness, frame adhesive, and temperatures were measured and used as input to the finite element model. The correlation between simulation results and experimental data was excellent. Analyses were also performed to study pellicle mounting mechanisms and pellicle frame flatness.

EUV mask pilot line at Intel Corporation

The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating barriers to manufacturability of EUV masks. It concentrates on EUV-specific process modules and makes use of the captive standard photomask fabrication capability of Intel Corporation. The goal of the pilot line is to accelerate EUV mask development to intersect the 32nm technology node. This requires EUV mask technology to be comparable to standard photomask technology by the beginning of the silicon wafer process development phase for that technology node. The pilot line embodies Intels strategy to lead EUV mask development in the areas of the mask patterning process, mask fabrication tools, the starting material (blanks) and the understanding of process interdependencies. The patterning process includes all steps from blank defect inspection through final pattern inspection and repair. We have specified and ordered the EUV-specific tools and most will be installed in 2004. We have worked with International Sematech and others to provide for the next generation of EUV-specific mask tools. Our process of record is run repeatedly to ensure its robustness. This primes the supply chain and collects information needed for blank improvement.

EUVL mask patterning with blanks from commercial suppliers

Extreme Ultraviolet Lithography (EUVL) reflective mask blank development includes low thermal expansion material fabrication, mask substrate finishing, reflective multi-layer (ML) and capping layer deposition, buffer (optional)/absorber stack deposition, EUV specific metrology, and ML defect inspection. In the past, we have obtained blanks deposited with various layer stacks from several vendors. Some of them are not commercial suppliers. As a result, the blank and patterned mask qualities are difficult to maintain and improve. In this paper we will present the evaluation results of the EUVL mask pattering processes with the complete EUVL mask blanks supplied by the commercial blank supplier. The EUVL mask blanks used in this study consist of either quartz or ULE substrates which is a type of low thermal expansion material (LTEM), 40 pairs of molybdenum/silicon (Mo/Si) ML layer, thin ruthenium (Ru) capping layer, tantalum boron nitride (TaBN) absorber, and chrome (Cr) backside coating. No buffer layer is used. Our study includes the EUVL mask blank characterization, patterned EUVL mask characterization, and the final patterned EUVL mask flatness evaluation.

Characterization of electrostatically chucked EUVL mask blanks

The flatness of electrostatically chucked EUVL reticles was evaluated on two Zerodur bipolar coulombic electrostatic chucks (from Invax Technologies) of different thicknesses, which represent different chuck stiffness, different hardness of the dielectric material used for chuck surface, and different surface flatness finishing. A Zygo GPI interferometer was used to measure the flatness of the chucked reticles, freestanding reticles, and chuck surfaces. The chucked reticle flatness was impacted by the flatness and shape of the front and back sides of the reticle and that of the chuck. Chucked reticle dynamics during chucking and reticle hysterisis were observed. A stable operation range for the e-chucks was found. We also observed backside-particle-induced-out of plane distortion (OPD) on the chucked reticle in the experiments when Cu particles of height 1 to 3μm were placed between the chuck and the reticle backside.

Distortions in advanced photomasks from soft pellicles

The more stringent image placement error budgets for 157-nm lithography require a total assessment of photomask distortion sources and their eventual control. This includes proposed soft pellicle systems. Similar pellicles in use today have been previously identified as a major source of distortion. To characterize the many aspects of this problem, a numerical modeling and simulation program was initiated. Finite element results are reported in this paper along with correlations from experimental measurements.

Optimization of electrostatic chuck for mask blank flatness control in extreme ultraviolet lithography

Overlay requirements of Extreme Ultra-violet Lithography (EUVL) dictate reticle flatness errors of 50nm or less. During the early phase of EUVL development, it was decided that an electrostatic chuck was required to flatten EUVL masks to these specifications. However current experience and test data have demonstrated that it will be very difficult to reach the desired mask flatness goal without a thorough understanding and advanced control of the echucking process. The results of a parametric model study are reported in this paper. In this study we calculated the chucking force dependence of activating voltage, e-chuck geometry, film material, and pin design, and then proposed an optimized chuck design. We have also engaged in a material study for the mask backside coating for the purpose of reducing flatness errors and minimizing backside particle generation. We have also designed and built an automated, vacuum based, interferometric metrology tool to enable e-chucking experimentation. An early status report of this tool will be included in this paper.

Hard pellicle study for 157-nm lithography

Identifying a functional pellicle solution for 157-nm lithography remains the most critical issue for mask technology. Developing a hard pellicle system has been a recent focus of study. Fabrication and potential pellicle-induced image placement errors present the highest challenges to the technology for meeting the stringent error budget for manufacturing devices in the 65-nm regime. This paper reports the results of a comprehensive proof-of-concept study on the state-of-art hard pellicle systems, which feature 800-mm thick modified fused silica pellicles and quartz frames. Pellicles were fabricated to ensure optical uniformity and flatness. Typical intrinsic warpage of these pellicles was close to the theoretical limit of 4.0 mm under a gravitational load. Quartz frames had bows less than 1.0 mm. The advantage of quartz frames with matched thermal expansion was demonstrated. An interferometric facility was developed to measure the flatness of the mask and pellicle system before and after pellicle mounting. Depending on the mounting process as well as mounting tool characteristics and techniques, variations were observed from pellicle to pellicle, mount to mount, and mask to mask. A redesign of the mounter and mounting process has significantly improved pellicle flatness. Finite element models were also generated to characterize the relative importance of the principal sources of pellicle-induced photomask distortions. Simulation results provide insightful guidance for improving image quality when employing a hard pellicle.

Sub 100-nm defect classification and analysis on extreme ultraviolet (EUV) mask blanks and substrates

The most critical challenges in EUVL include the manufacturing of defect-free EUVL substrates, blanks, and masks. Developing capability in the areas of sub-100nm defect metrology, characterization, and analysis provides the key path for defect root-cause analysis in the defects elimination roadmap. We have demonstrated successful application of integrated surface analytical techniques, including AES (Auger Electron Spectroscopy), EDX (Electron Dispersion X-ray Spectrometry), SEM, and AFM to review, analyze, and characterize defects on EUVL multilayer blanks and substrates, following the optical defect inspection process by the Lasertec M1350, which does defect scanning, mapping, image review, and fiducial marking. Small defects, 40nm wide and 10nm tall, have been analyzed in morphology as well as in composition. In order to overcome the electron beam charging problem on the substrate materials during analysis, we applied marking and metal film coating on the LTEM substrates and acquired composition data. Defect metrology data serve as finger prints of the EUV blank fabrication process. We have discovered that the majority of the multilayer defects today are embedded bumps, pinholes, and organic materials that originated from the LTEM substrates. Composition data of the defects also suggested that process chemicals and human handling of process are the culprit of these defects. Therefore defect reduction efforts should be focused on the processes or procedures which take place from the glass finishing process to the very first layers of silicon molybdenum deposition.