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Enders Gerhard

Infineon Technologies

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Publication

Featured researches published by Enders Gerhard.

Archive | 2006

Verfahren zum Herstellen einer Halbleiterspeichereinrichtung

Kroenke Matthias; Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2003

Trenchzelle für ein DRAM-Zellenfeld sowie Herstellungsverfahren hierfür

Voigt Peter; Enders Gerhard

Archive | 2008

Chain-FeRAM-Speichereinrichtung

Kroenke Matthias; Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2003

Production of a semiconductor device e.g. chain ferroelectric random access memory device comprises forming and/or structuring capacitor arrangements on semiconductor substrate, passivating region and/or surface region

Bruchhaus Rainer; Enders Gerhard; Hartner Walter; Kroenke Matthias; Mikolajick Thomas; Nagel Nicolas; Roehner Michael

Archive | 2003

Production of a trenched strap contact in a memory cell comprises forming a trench capacitor in a substrate, filling an unfilled region with monocrystalline silicon and further processing

Voigt Peter; Bonart Dietrich; Enders Gerhard; Fischer Bjoern

Archive | 2010

DRAM-Speicherzelle für schnellen Schreib-/Lesezugriff und Speicherzellenfeld

Sommer Michael; Enders Gerhard

Archive | 2006

Verfahren zur Herstellung eines Vertikaltransistors

Bonart Dietrich; Voigt Peter; Enders Gerhard

Archive | 2004

Production of a buried strap contact for a storage capacitor of a storage cell comprises back etching the inner electrode layer in a trench, removing the exposed insulating layer from the trench wall and further processing

Voigt Peter; Enders Gerhard

Archive | 2004

Manufacturing method of semiconductor substrate having multi-gate stack semiconductor structure and semiconductor structure

Enders Gerhard; Faul Juergen; Fischer Bjoern; Heineck Lars; Hierlemann Matthias; Martin Popp; Peter Voigt

Archive | 2004

Integrated semiconductor memory, has alternate bit lines in two structural planes, and lying oblique to directions along which directly adjacent doping regions are arranged

Enders Gerhard; Spitzer Andreas; Bonart Dietrich

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Mikolajick Thomas

Infineon Technologies

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Bruchhaus Rainer

Siemens

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Hartner Walter

Infineon Technologies

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Kroenke Matthias

Infineon Technologies

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Nagel Nicolas

Siemens

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Roehner Michael

Infineon Technologies

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Voigt Peter

Infineon Technologies

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Bonart Dietrich

Infineon Technologies

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Sommer Michael

Infineon Technologies

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Fischer Bjoern

Infineon Technologies

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