Erik J. Lenferink

Coherent optical non-reciprocity in axisymmetric resonators

We describe an approach to optical non-reciprocity that exploits the local helicity of evanescent electric fields in axisymmetric resonators. By interfacing an optical cavity to helicity-sensitive transitions, such as Zeeman levels in a quantum dot, light transmission through a waveguide becomes direction-dependent when the state degeneracy is lifted. Using a linearized quantum master equation, we analyze the configurations that exhibit non-reciprocity, and we show that reasonable parameters from existing cavity QED experiments are sufficient to demonstrate a coherent non-reciprocal optical isolator operating at the level of a single photon.

Size-tunable Lateral Confinement in Monolayer Semiconductors

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS

Evaluation of defects in cuprous oxide through exciton luminescence imaging

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Enhanced conductivity along lateral homojunction interfaces of atomically thin semiconductors

QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS

Low-temperature magnetization dynamics of magnetic molecular solids in a swept field

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Hydrothermal crystal growth, piezoelectricity, and triboluminescence of KNaNbOF5

QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems.Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems.

Environmental engineering of transition metal dichalcogenide optoelectronics

The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing that the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton luminescence. Strain is reduced by annealing. In addition, annealing causes annihilation of oxygen and copper vacancies, which leads to a negative correlation between luminescence of unlike vacancies.

Width-dependent Photoluminescence and Anisotropic Raman Spectroscopy from Monolayer MoS

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS

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Nanoribbons

, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS