Nathaniel P. Stern
Northwestern University
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Featured researches published by Nathaniel P. Stern.
Physical Review Letters | 2006
Nathaniel P. Stern; Sayantani Ghosh; G. Xiang; M.H. Zhu; Nitin Samarth; D. D. Awschalom
Electrically induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3+/-1.5 Omega(-1) m(-1)/|e| at 20 K, which is consistent with the extrinsic mechanism. Both the current-induced spin polarization and the spin Hall effect are observed at temperatures from 10 to 295 K.
Physical Review B | 2005
M. Poggio; Roberto C. Myers; Nathaniel P. Stern; A. C. Gossard; D. D. Awschalom
The growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures
Nature Physics | 2011
D. J. Alton; Nathaniel P. Stern; Takao Aoki; Hansuek Lee; E. Ostby; Kerry J. Vahala; H. J. Kimble
(\ensuremath{\sim}250\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C})
Physical Review Letters | 2005
Roberto C. Myers; M. Poggio; Nathaniel P. Stern; A. C. Gossard; D. D. Awschalom
and high As overpressures, leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as photoluminescence (PL). We report on optical-quality
New Journal of Physics | 2012
C. Lacroûte; K. S. Choi; Akihisa Goban; D. J. Alton; D. Ding; Nathaniel P. Stern; H. J. Kimble
{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}∕{\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}
Nature Photonics | 2017
Yen Jung Chen; Jeffrey D. Cain; Teodor K. Stanev; Vinayak P. Dravid; Nathaniel P. Stern
quantum wells (QWs) with
Applied Physics Letters | 2007
Nathaniel P. Stern; D. W. Steuerman; S. Mack; A. C. Gossard; D. D. Awschalom
xl0.2%
Optics Express | 2014
Erik J. Lenferink; Guohua Wei; Nathaniel P. Stern
grown at a substrate temperature of
Physical Review B | 2007
Nathaniel P. Stern; Roberto C. Myers; M. Poggio; A. C. Gossard; D. D. Awschalom
400\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}
Physical Review B | 2004
M. Poggio; Geoffrey Mark Steeves; Roberto C. Myers; Nathaniel P. Stern; A. C. Gossard; D. D. Awschalom
. Electrical and structural measurements demonstrate that this elevated temperature reduces As defects while allowing the substitutional incorporation of Mn into Ga sites. From a combination of Hall and secondary ion mass spectroscopy measurements we estimate that at least 70%--90% of the Mn incorporates substitutionally in all samples studied. The incorporation behavior shows both a substrate temperature and QW width dependence. The low defect density of these heterostructures, compared to typical lower-temperature-grown GaMnAs, enables the observation of both polarization-resolved PL and coherent electron spin dynamics, from which the conduction-band exchange parameter is extracted. No evidence of long-range Mn spin coupling is observed, whereas negative effective Curie temperatures indicate spin heating due to photoexcitation. Light Mn doping maximizes the electron spin lifetime, indicating the importance of the Dyakonov-Perel decoherence mechanism in these structures. PL spectra reveal a low-energy peak from shallow donors, which, because of the paramagnetic behavior of its PL polarization, we ascribe to Mn interstitials.