Teodor K. Stanev

Valley-polarized exciton–polaritons in a monolayer semiconductor

Exploitation of the valley electronic structure of transition metal dichalcogenides with exciton–polaritons is an elusive challenge. Now, valley-polarized exciton–polaritons in monolayers of MoS2 have been demonstrated.

Size-tunable Lateral Confinement in Monolayer Semiconductors

Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS

Silicon-nitride photonic circuits interfaced with monolayer MoS2

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Valley-selective optical Stark effect probed by Kerr rotation

QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS

Control of interlayer physics in 2H transition metal dichalcogenides

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Enhanced conductivity along lateral homojunction interfaces of atomically thin semiconductors

QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems.Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties in monolayer transition metal dichalcogenides provide further degrees of freedom requisite for information processing and spintronics. In nanostructures, however, spatial confinement can cause hybridization that inhibits the robustness of these emergent properties. Here, we show that laterally-confined excitons in monolayer MoS2 nanodots can be created through top-down nanopatterning with controlled size tunability. Unlike chemically-exfoliated monolayer nanoparticles, the lithographically patterned monolayer semiconductor nanodots down to a radius of 15 nm exhibit the same valley polarization as in a continuous monolayer sheet. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS2 nanostructures using semiconductor-compatible processing suggest that monolayer semiconductor nanodots have potential to be multimodal building blocks of integrated optoelectronics and spintronics systems.

Interfacing monolayer MoS2 with silicon-nitride integrated photonics

We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

Valley-selective photon-dressed states in transition metal dichalcogenides

The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

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Hydrothermal crystal growth, piezoelectricity, and triboluminescence of KNaNbOF5

and WSe