Farhad Moghadam
Applied Materials
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Publication
Featured researches published by Farhad Moghadam.
international symposium on plasma process induced damage | 2000
Hichem M'Saad; Sameer Desai; Chrystelle Hamon; Seon-Mee Cho; Farhad Moghadam
The impact of the HDP-CVD process on Si surfaces has been studied. It has been shown that the sputter component in the process enhances the features and the detection of Si surface defects. These defects, 0.16-0.30 /spl mu/m in size, are correlated to other characterization techniques such as capacitance-voltage measurements, plasma damage monitoring, and photoconductance decay spectroscopy. We show that these defects are a result of the interaction between the energetic ions in the deposition process and the crystal-originated voids during the Czochralski crystal growth. We show how these defects can be modulated among different processing conditions. The learning has been applied to optimizing the initial steps of plasma deposition in the HDP-CVD process for shallow trench isolation and pre-metal dielectric applications. This work also underscores the importance of applying low information content sensors to the early detection and control of plasma damage in high density plasma applications.
Process, equipment, and materials control in integrated circuit manufacturing. Conference | 1999
Farhad Moghadam
The latest National Technology Roadmap for Semiconductors (NTRS) shows the most aggressive trend in IC performance advancements to date. However, the NTRS projects a course that is two to three years ahead of current industry capabilities. This discrepancy is due to the unprecedented number of new materials being introduced - transmissions that typically require five to ten years of R and D and significant modifications to IC manufacturing environments. CLearly, the challenges presented by these accelerated material changes could greatly impact product quality and reliability. This paper addresses integration complexity and capacitance issues, plus the new algorithms, design techniques, and system and chip architectures needed to meet the technology milestones dictated by the NTRS. A fundamental understanding of the new materials and processes, combined with high-productivity tools, such as the Producer mainframe, will be required to enable optimized front and back end processing.
Archive | 1999
David Cheung; Wai-Fan Yau; Robert P. Mandal; Shin-Puu Jeng; Kuo-Wei Liu; Yung-Cheng Lu; Michael Barnes; Ralf B. Willecke; Farhad Moghadam; Tetsuya Ishikawa; Tze Wing Poon
Archive | 2001
Claes Bjorkman; Min Melissa Yu; Hongquing Shan; David Cheung; Wai-Fan Yau; Kuo-Wei Liu; Nasreen Gazala Chapra; Gerald Zheyao Yin; Farhad Moghadam; Judy H. Huang; Dennis Yost; Betty Tang; Yunsang Kim
Archive | 1996
Fred C. Redeker; Farhad Moghadam; Hiroji Hanawa; Tetsuya Ishikawa; Dan Maydan; Shijian Li; Brian Lue; Robert J. Steger; Manus Wong; Yaxin Wong; Ashok K. Sinha
Archive | 2005
Farhad Moghadam; Jun Zhao; Timothy W. Weidman; Rick J. Roberts; Li-Quan Xia; Alexandros T. Demos
Archive | 1999
Farhad Moghadam; David Cheung; Ellie Yieh; Li-Qun Xia; Wai-Fan Yau; Chi-I Lang; Shin-Puu Jeng; Frederic Gaillard; Shankar Venkataraman; Srinivas D. Nemani
Archive | 2002
Ju-hyung Lee; Ping Xu; Shankar Venkataraman; Li-Qun Xia; Fei Han; Ellie Yieh; Srinivas D. Nemani; Kangsub Yim; Farhad Moghadam; Ashok K. Sinha; Yi Zheng
Archive | 2002
Wai-Fan Yau; David Cheung; Nasreen Gazala Chopra; Yung-Cheng Lu; Robert P. Mandal; Farhad Moghadam
Archive | 2006
Timothy W. Weidman; Kapila Wijekoon; Zhize Zhu; Avgerinos V. Gelatos; Amit Khandelwal; Arulkumar Shanmugasundram; Michael X. Yang; Fang Mei; Farhad Moghadam