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Dive into the research topics where Farhad Moghadam is active.

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Featured researches published by Farhad Moghadam.


international symposium on plasma process induced damage | 2000

Plasma-induced defect generation on silicon surfaces in HDP-CVD processing

Hichem M'Saad; Sameer Desai; Chrystelle Hamon; Seon-Mee Cho; Farhad Moghadam

The impact of the HDP-CVD process on Si surfaces has been studied. It has been shown that the sputter component in the process enhances the features and the detection of Si surface defects. These defects, 0.16-0.30 /spl mu/m in size, are correlated to other characterization techniques such as capacitance-voltage measurements, plasma damage monitoring, and photoconductance decay spectroscopy. We show that these defects are a result of the interaction between the energetic ions in the deposition process and the crystal-originated voids during the Czochralski crystal growth. We show how these defects can be modulated among different processing conditions. The learning has been applied to optimizing the initial steps of plasma deposition in the HDP-CVD process for shallow trench isolation and pre-metal dielectric applications. This work also underscores the importance of applying low information content sensors to the early detection and control of plasma damage in high density plasma applications.


Process, equipment, and materials control in integrated circuit manufacturing. Conference | 1999

Integration challenges at 0.15 μm Technology node

Farhad Moghadam

The latest National Technology Roadmap for Semiconductors (NTRS) shows the most aggressive trend in IC performance advancements to date. However, the NTRS projects a course that is two to three years ahead of current industry capabilities. This discrepancy is due to the unprecedented number of new materials being introduced - transmissions that typically require five to ten years of R and D and significant modifications to IC manufacturing environments. CLearly, the challenges presented by these accelerated material changes could greatly impact product quality and reliability. This paper addresses integration complexity and capacitance issues, plus the new algorithms, design techniques, and system and chip architectures needed to meet the technology milestones dictated by the NTRS. A fundamental understanding of the new materials and processes, combined with high-productivity tools, such as the Producer mainframe, will be required to enable optimized front and back end processing.


Archive | 1999

Plasma processes for depositing low dielectric constant films

David Cheung; Wai-Fan Yau; Robert P. Mandal; Shin-Puu Jeng; Kuo-Wei Liu; Yung-Cheng Lu; Michael Barnes; Ralf B. Willecke; Farhad Moghadam; Tetsuya Ishikawa; Tze Wing Poon


Archive | 2001

Integrated low K dielectrics and etch stops

Claes Bjorkman; Min Melissa Yu; Hongquing Shan; David Cheung; Wai-Fan Yau; Kuo-Wei Liu; Nasreen Gazala Chapra; Gerald Zheyao Yin; Farhad Moghadam; Judy H. Huang; Dennis Yost; Betty Tang; Yunsang Kim


Archive | 1996

Symmetric tunable inductively coupled HDP-CVD reactor

Fred C. Redeker; Farhad Moghadam; Hiroji Hanawa; Tetsuya Ishikawa; Dan Maydan; Shijian Li; Brian Lue; Robert J. Steger; Manus Wong; Yaxin Wong; Ashok K. Sinha


Archive | 2005

Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices

Farhad Moghadam; Jun Zhao; Timothy W. Weidman; Rick J. Roberts; Li-Quan Xia; Alexandros T. Demos


Archive | 1999

Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound

Farhad Moghadam; David Cheung; Ellie Yieh; Li-Qun Xia; Wai-Fan Yau; Chi-I Lang; Shin-Puu Jeng; Frederic Gaillard; Shankar Venkataraman; Srinivas D. Nemani


Archive | 2002

Method of depositing dielectric materials in damascene applications

Ju-hyung Lee; Ping Xu; Shankar Venkataraman; Li-Qun Xia; Fei Han; Ellie Yieh; Srinivas D. Nemani; Kangsub Yim; Farhad Moghadam; Ashok K. Sinha; Yi Zheng


Archive | 2002

Method of improving moisture resistance of low dielectric constant films

Wai-Fan Yau; David Cheung; Nasreen Gazala Chopra; Yung-Cheng Lu; Robert P. Mandal; Farhad Moghadam


Archive | 2006

Contact metallization scheme using a barrier layer over a silicide layer

Timothy W. Weidman; Kapila Wijekoon; Zhize Zhu; Avgerinos V. Gelatos; Amit Khandelwal; Arulkumar Shanmugasundram; Michael X. Yang; Fang Mei; Farhad Moghadam

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