G. S. Camarda

Effect of Te precipitates on the performance of CdZnTe detectors

Measurements using the National Synchrotron Light Source provided a detailed comparisons of the microscale detector response and infrared microscopy images for CdZnTe Frisch-ring x-ray and gamma detectors. Analysis of the data showed conclusively that local deteriorations of the electron charge collection and x-ray device response fully correlate with the presence of Te precipitates as seen in the IR images. Effects of the surface processing conditions on the detector performance were also clearly observed.

Characterization of large cadmium zinc telluride crystals grown by traveling heater method

The focus of this paper is to evaluate thick, 20×20×10 and 10×10×10mm3, cadmium zinc telluride (CZT), Cd0.9Zn0.1Te, crystals grown using the traveling heater method (THM). The phenomenal spectral performance and small size and low concentration of Te inclusions/precipitates of these crystals indicate that the THM is suitable for the mass production of CZT radiation detectors that can be used in a variety of applications. Our result also proves that with careful material selection using IR and high-quality fabrication processes, the theoretical energy resolution limit can be achieved.

Characterization of Traveling Heater Method (THM) Grown

High-performance semi-insulating single crystals of n-type (CZT) were grown using the traveling heater method (THM). X-ray and -ray detector configurations fabricated from this material have a room-temperature mean energy resolution of 4.3% FWHM for a source (122 keV) and uniform pixel-to-pixel response on monolithic 20205 pixellated detectors. Energy resolution of 1% FWHM for (662keV) has been measured on virtual Frisch-grid 4411 devices useful for homeland security applications. Additional characterization techniques including mobility-lifetime measurements, infrared microscopy, X-ray topography, and OPTICAL Deep Level Transient Spectroscopy (ODLTS) have demonstrated the superior quality of this THM CZT.

{\hbox{Cd}}_{0.9}{\hbox{Zn}}_{0.1}{\hbox{Te}}

We studied the effects of small, <20 mum, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to bound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within the crystals.

Crystals

The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, < 5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, > 1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.

Performance-limiting Defects in CdZnTe Detectors

Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.

Internal Electric-Field-Lines Distribution in CdZnTe Detectors Measured Using X-Ray Mapping

In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5x12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design for the parallelepiped-shaped CZT crystals. Both the experimental testing and modelling results are described.

Performance studies of CdZnTe detector by using a pulse shape analysis

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the tra...

OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.

We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

Defect levels of semi-insulating CdMnTe:In crystals

High densities of impurities and defects lead to severe charge-carrier trapping that can be major issues in assuring the high performance of CZT detectors. For some medical-imaging applications, the typical X-ray flux can be very high. Under such high irradiation conditions, the trapped charge builds up inside the detector affecting its stability. This phenomenon generally is termed the polarization effect. We conducted detailed studies on polarization in CZT crystals employing a highly collimated synchrotron X-ray radiation source available at Brookhavens National Synchrotron Light Source (NSLS). We were able to induce polarization effects by irradiating specific areas within the detector. These measurements allowed us to make, for the first time, a quantitative comparison between areas where polarization is induced, and the electron- and hole-collection X-ray maps obtained at low flux, where no polarization is induced. We discuss the results of these polarization studies.