R. Gul

Defect levels of semi-insulating CdMnTe:In crystals

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the tra...

Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals

We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the donor-bound-exciton emission reveals an unexpected blue-shift of the CZT bandgap at Te inclusions, which indicates that for optical measurements the localized strain field needs to be considered for accurate calculation of Zn composition and energy levels near micro-scale defects. We observed that the line widths of the donor-bound-exciton peak and defect-related D band are broadened in regions with a high density of dislocations; in contrast, the donor-acceptor-pair peak is narrowed.

Effect of Te Inclusions in CdZnTe Crystals at Different Temperatures

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device’s satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier’s response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 × 5 mm2 and 6 × 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabricated from unselected CZT material.

High Compositional Homogeneity of CdTexSe1-x Crystals Grown by the Bridgman Method

We obtained high-quality CdTexSe1−x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional CdxZn1−xTe (CdZnTe or CZT).

Array of virtual Frisch-grid CZT detectors with common cathode readout and pulse-height correction

We present our new results from testing 15-mm-long virtual Frisch-grid CdZnTe detectors with a common-cathode readout for correcting pulse-height distortions. The array employs parallelepiped-shaped CdZnTe (CZT) detectors of a large geometrical aspect ratio, with two planar contacts on the top and bottom surfaces (anode and cathode) and an additional shielding electrode on the crystals sides to create the virtual Frisch-grid effect. We optimized the geometry of the device and improved its spectral response. We found that reducing to 5 mm the length of the shielding electrode placed next to the anode had no adverse effects on the devices performance. At the same time, this allowed corrections for electron loss by reading the cathode signals to obtain depth information.

Mini Compton Camera Based on an Array of Virtual Frisch-Grid CdZnTe Detectors

We constructed a mini Compton camera based on an array of CdZnTe detectors and assessed its spectral and imaging properties. The entire array consisted of 6 ×6 Frisch-grid CdZnTe detectors, each with a size of 6 ×6 ×15 mm3. Since it is easier and more practical to grow small CdZnTe crystals rather than large monolithic ones, constructing a mosaic array of parallelepiped crystals can be an effective way to build a more efficient, large-volume detector. With the fully operational CdZnTe array, we measured the energy spectra for 133Ba -, 137Cs -, 60Co-radiation sources; we also located these sources using a Compton imaging approach. Although the Compton camera was small enough to hand-carry, its intrinsic efficiency was several orders higher than those generated in previous researches using spatially separated arrays, because our camera measured the interactions inside the CZT detector array, wherein the detector elements were positioned very close to each other. The performance of our camera was compared with that based on a pixelated detector.

An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

In this research, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτe) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trapping and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (VCd−) were identified as a dominant trap. The VCd− were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at Ev + 0.36 eV an...

Research Update: Point defects in CdTexSe1−x crystals grown from a Te-rich solution for applications in detecting radiation

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

Point defect characterization in CdZnTe

Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I–V), and gamma-ray spectroscopy. CdZnTe crystals were acquired from different commercial vendors and characterized for their point defects. I-DLTS studies included measurements of defect parameters such as energy levels in the band gap, carrier capture cross sections, and defect densities. The induced current due to laser-generated carriers was measured using TCT. The data were used to determine the transport properties of the detectors under study. A good correlation was found between the point defects in the detectors and their performance.