Gab-jin Nam

METHOD OF FORMING HIGH DIELECTRIC FILM USING ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR HAVING THE HIGH DIELECTRIC FILM

Method of forming a layer and forming a capacitor of a semiconductor device having the same layer

Method of forming a layer and method of forming a capacitor of a semiconductor device having the same

Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

Apparatus and method for supplying a source, and method of depositing an atomic layer using the same

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

SEMICONDUCTOR DEVICE HAVING TRI-GATE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Methods of forming a layer utilizing a liquid-phase lanthanum precursor and methods of manufacturing a capacitor using the same

Integrated circuit devices with metal-insulator-metal capacitors and methods of forming the same