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Featured researches published by Jong-Cheol Lee.


international conference on software maintenance | 1994

New alignment materials having polyconjugated double bond for ferroelectric liquid crystal displays

S.W. Kang; S.E. Chung; S.H. Jin; Jung-Chan Lee; Yong-Ho Jeon; Jong-Cheol Lee

Abstract New surface alignment materials for surface stabilized ferroelectric liquid crystal displays(SSFLCDs) are investigated. Rubbed polyconjugated polymeric materials such as poly(1,4-phenylenevinylene)(PPV) are used as orientation films in very thin FLC cells. The electro-optical properties of the SSFLC cells are examined. We have obtained really good optical memory. These results are also compared with those of conventional SSFLC cells having rubbed polyimide orientational layers.


international conference on software maintenance | 1994

Synthesis and mesomorphic properties of some terphenyl derivatives

Yong-Ho Jeon; S.Y. Cho; S.S. Lee; Jong-Cheol Lee; S.W. Kang; Kyu-Myung Choi

Summary form only given. A new series of terphenyl derivatives has been synthesized and their mesomorphic properties have been studied. The compounds have been investigated by differential scanning calorimetry and polarizing microscopy. The 2,3-difluoro substituted terphenyl derivatives is low melting liquid crystals with wide range smectic C phase; these compounds are excellent host materials for ferroelectric system.


Archive | 2005

Method of forming a layer and forming a capacitor of a semiconductor device having the same layer

Jong-Cheol Lee; Ki-Vin Im; Sung-tae Kim; Young-sun Kim; Cha-young Yoo; Han-mei Choi; Gab-jin Nam; Seung-Hwan Lee


Archive | 2005

Method of forming a layer and method of forming a capacitor of a semiconductor device having the same

Jong-Cheol Lee; Ki-Vin Im; Sung-tae Kim; Young-sun Kim; Cha-young Yoo; Han-mei Choi; Gab-jin Nam


Archive | 2006

Dielectric structures having high dielectric constants, methods of forming the dielectric structures, non-volatile semiconductor memory devices having the dielectric structures and methods of manufacturing the non-volatile semiconductor memory devices

Jong-Cheol Lee; Sung-Tae Kim; Young-sun Kim; Cha-young Yoo; Gab-jin Nam; Young-Geun Park; Jae-Hyoung Choi; Jae-hyun Yeo; Ha-Jin Lim; Yun-Seok Kim


Archive | 2013

Curved display apparatus and multi display apparatus having the same

Jun-seok An; Dong-Wook Kim; Sung-Hwan Kim; Jee-su Park; Chan-Hong Park; Byung-kook Sim; Jong-Cheol Lee; Cheolse Lee; Hyeong-Sik Choi; Byung-Wook Ahn; Cheong-hun Lee


Archive | 2006

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

Jong-Cheol Lee; Sung-Tae Kim; Young-sun Kim; Cha-young Yoo; Gab-jin Nam; Young-Geun Park; Jae-Hyoung Choi; Jae-hyun Yeo; Ha-Jin Lim; Yun-Seok Kim


Archive | 2001

Memory architecture permitting selection of storage density after fabrication of active circuitry

Su-Chul Kim; Hyun-Geun Byun; Kwang-Jin Lee; Jong-Cheol Lee; Uk-Rae Cho


Archive | 2000

Delay circuit having variable slope control and threshold detect

Jong-Cheol Lee; Hak-soo Yu


Archive | 2008

Semiconductor memory device with hierarchical bit line structure

Nam-Seog Kim; Jong-Cheol Lee; Hak-soo Yu; Uk-Rae Cho

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