Geoff Hatcher

A single-chip quad-band (850/900/1800/1900 MHz) direct conversion GSM/GPRS RF transceiver with integrated VCOs and fractional-n synthesizer

A monolithic IC has been designed which integrates all the active RF functions of a quad band GSM handset except for the power amplifier. A direct-conversion receiver (900 MHz, NF 3.0 dB, IIP2 +65 dBm) and an up-conversion loop transmitter (900 MHz spectrum at 400 kHz -65 dBc, phase noise at 20 MHz -64 dBc/Hz) using a fractional-N PLL and fully-integrated transmit and UHF VCOs.

A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed- loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135degC under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed- loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135degC under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.

A 40nm CMOS single-chip 50Gb/s DP-QPSK/BPSK transceiver with electronic dispersion compensation for coherent optical channels

Optical communication technology in long-haul and metropolitan links is experiencing a transition to coherent techniques and high spectral efficiency modulation formats such as dual-polarization (DP) QPSK, DP-QAM and OFDM. The combination of coherent demodulation and DSP allows costly optical signal-processing hardware used to compensate fiber optic impairments such as chromatic dispersion (CD) and polarization-mode dispersion (PMD) to be replaced by DSP-based techniques [1]. Economic large-scale deployment of coherent systems requires the integration of the optical transceiver functions in CMOS technology.