Gerhard Hoppen
Leica Microsystems
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Publication
Featured researches published by Gerhard Hoppen.
21st European Mask and Lithography Conference | 2005
Frank Hillmann; Stefan Dobereiner; Christian Gittinger; Richard Reiter; Günther Falk; Hans-Jürgen Brück; Gerd Scheuring; Artur Bosser; Michael Heiden; Gerhard Hoppen; Wolfgang Sulik; Wolfgang Vollrath
The increased requirements on reticles for the 65nm technology node with respect to CD homogeneity and CD mean to target requirements call for a metrology system with adequate measurement performance. We report on the new water immersion technique and the system concept of the worlds first optical CD metrology system based on this technology. The core of it is a new DUV immersion objective with a NA of 1.2, using illumination at a wavelength of 248nm. The largest challenge of the water immersion technology was the fluid handling. The key compo-nents, a water injection and removal unit, developed by MueTec, solve this issue. To avoid contaminations the purified DI water is micro-filtered. An environmental chamber guarantees extremely stable measurement conditions. The advantages of optical CD measurements in transmitted light compared to CD-SEM is shown. With this system, already installed, excellent results for short- and longterm repeatability for both linewidth and contact measurements were achieved on COG, KrF HT and ArF HT masks. The linearity range of the system is extended down to 220nm. A comparison of CD measurements between the different tool generations such as the Leica LWM250/270 DUV at 248nm with a NA of 0.9 is shown. An outlook on the future potentials of optical mask CD metrology finalises this report.
Proceedings of SPIE, the International Society for Optical Engineering | 2006
Thomas Sure; Lambert Danner; Peter Euteneuer; Gerhard Hoppen; Armin Pausch; Wolfgang Vollrath
During the last years, new microscope applications require an increased resolution which enforces the development of new state of the art high NA immersion objectives. With the introduction of the 4Pi confocal fluorescence microscope, the increase of the numerical aperture from NA=1.4 to NA=1.46 makes sense, although the gain of lateral resolution is quite small. On the other hand, for inspection and metrology in the semiconductor industry the continuously decreasing structures need the highest possible resolution, which can be achieved with high NA water immersion objectives working in the DUV wavelength range. Building this kind of objectives requires special measuring and testing technologies and a manufacturing precision which has never been realized before in series production.
Archive | 2001
Franz Dr. Cemic; Lambert Danner; Gerhard Hoppen
Archive | 2001
Franz Dr. Cemic; Lambert Danner; Gerhard Hoppen
Archive | 2000
Gerhard Hoppen
Archive | 2002
Gerhard Hoppen
Archive | 2001
Franz Dr. Cemic; Lambert Danner; Gerhard Hoppen; ホッペン ゲルハルト; チェミック フランツ; ダナー ラムベルト
Archive | 2002
Gerhard Hoppen; ホッペン ゲルハルト
Archive | 2009
Henning Backhauss; Bittner Hermann; Büttner Alexander; Lambert Danner; Kurt Hahn; Roland Hedrich; Gerhard Hoppen; Christof Krampe-Zadler; Albert Kreh; Vollrath Wolfgang
Archive | 2001
Franz Dr. Cemic; Lambert Danner; Gerhard Hoppen