Gi-Heon Kim

Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

High Performance and Stable Flexible Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers on Poly(Ethylene Naphthalate) Substrate

A flexible charge-trap-type memory (f-CTM) thin-film transistor was proposed and fabricated on poly(ethylene naphthalate) (PEN) substrate. All the fabrication process temperature was suppressed below 180 °C. To improve the surface roughness and water vapor transmission rate of the PEN substrate, the organic/inorganic hybrid barrier layer was introduced. The gate-stack was composed of all oxide layers, such as In-Ga-Zn-O active channel, ZnO charge-trap layer, Al2O3 blocking/tunneling layers, and In-Sn-O transparent electrode, in which double-layered tunneling and top-protection layers were designed, so that the f-CTMs could exhibit stable and excellent device performance. As results, wide memory margin (25.6 V), fast programming speed (~500 ns), and long retention time (>3 h) were obtained at room temperature and at 80 °C. Furthermore, these memory device characteristics were not degraded even after the delamination of PEN substrate and under the bending situation with a given curvature radius (3.3 mm).

Light-adaptable display for the future advertising service

ABSTRACT In this paper, a new light-adaptable display (LAD) structure with minimum power consumption is proposed for the future advertising service, and the demonstrated results are reported. An organic light-emitting diode with color reflection (colored OLED) was applied for the reflective- and emissive-mode device, and a guest-host liquid-crystal device (GH-LC) was adopted for the light shutter device. The current efficiency and reflectance of the colored OLED were 35.15 cd/A at 457 cd/m2 luminance and 63% for the yellow color, respectively. The measured contrast ratio of GH-LC was 15.5:1 at dark-room conditions, respectively. Transparent oxide thin-film transistors were used for the backplane, and their average mobility was 9.08 cm2/V s, with a 0.5 standard deviation. Through the optimization of the fabrication process and the structures of each device, the LAD adaptively operating according to the environmental illuminance from dark to 10,000 nits was successfully demonstrated. Moreover, a new LAD driving method was proposed for minimizing the power consumption.

High-resolution TFT-LCD for spatial light modulator

SLM with very fine pixel pitch is needed for the holographic display system. Among various kinds of SLMs, commercially available high resolution LCoS has been widely used as a spatial light modulator. But the size of commercially available LCoS SLM is limited because the manufacturing technology of LCoS is based on the semiconductor process developed on small size Si wafer. Recently very high resolution flat panel display panel (~500ppi) was developed as a “retina display”. Until now, the pixel pitch of flat panel display is several times larger than the pixel pitch of LCoS. But considering the possibility of shrink down the pixel pitch with advanced lithographic tools, the application of flat panel display will make it possible to build a SLM with high spatial bandwidth product. We simulated High resolution TFT-LCD panel on glass substrate using oxide semiconductor TFT with pixel pitch of 20um. And we considered phase modulation behavior of LC(ECB) mode. The TFT-LCD panel is reflective type with 4-metal structure with organic planarization layers. The technical challenge for high resolution large area SLM will be discussed with very fine pixel.