Gianmauro Pozzovivo

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentration is investigated. Time-resolved PL indicating the C

GaN virtual prototyping: From traps modeling to system-level cascode optimization

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Decoupling of epitaxy‐related trapping effects in AlGaN/GaN metal–insulator semiconductor high‐electron‐mobility transistors

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Normally-Off High Electron Mobility Transistors

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Gate Overvoltage Protection for Compound Semiconductor Transistors

complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of

Semiconductor Device and Method

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RF POWER HEMT GROWN ON A SILICON OR SIC SUBSTRATE WITH A FRONT-SIDE PLUG CONNECTION

0.8eV for all samples, pointing to a common dominating trapping process and that the growth parameters affect solely the density of trap centres. It is inferred that the trapping process is likely to be directly related to C based defects.Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, and steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentrations is investigated. Time-resolved PL indicating the CN ON complex as the main source of the YL, while Ga vacancies or related complexes with C seem not to play a major role. The device dynamic performance is found to be significantly dependent on the C concentration close to the channel of the transistor. Additionally, the magnitude of the YL is found to be in agreement with the threshold voltage shift and with the on-resistance degradation. Trap analysis of the GaN buffer shows an apparent activation energy of ∼0.8...

Contact Structures for Compound Semiconductor Devices

The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.

SEMICONDUCTOR ARRANGEMENT WITH AN INTEGRATED HALL SENSOR

The decoupling of epitaxial factors influencing the dynamic instabilities of AlGaN/GaN metal–insulator semiconductor high-electron-mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage ( shift). Secondary ion mass spectroscopy and steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration next to the channel, on the distance between the channel, and the higher doped C region. Additionally, we note that experiments studying trapping should avoid large variations in the sheet carrier density (). This change in the itself has a significant impact on the shift. These experimental trends are also supported by a basic model and device simulation. Finally, the relationship between the yellow luminescence (YL) and the band edge (BE) ratio and the shift is investigated. As long as the basic layer structure is not changed, the determination of the YL/BE ratio obtained from steady-state PL is demonstrated to be a suitable way to predict trap concentrations in the GaN channel layer. n n n n n n n nshift for a device stressed at =u2009200u2009V and = V plotted on top of the sheet carrier density of the channel. Model: fitting of calculated relative shift for varying and values.