Godefridus A. M. Hurkx

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles

This paper investigates the effects of highly nonuniform collector doping profiles on the speed and breakdown performance of silicon bipolar transistors. Monte Carlo and drift diffusion simulation results point out that a thin highly doped layer adjacent to the base collector junction can improve the device cut off frequency without deteriorating significantly the maximum oscillation frequency and the breakdown voltage, provided the voltage drop across this layer is lower than an effective threshold of approximately 1.2 V. Guidelines are given for choosing the doping, position, and thickness of this layer.

Breaking the silicon limit using semi-insulating Resurf layers

In this paper, we present results on a novel multi-Resurf technique that involves the use of semi-insulating layers, in which the flattening of the electric field profile is achieved by virtue of a small leakage current. Unlike conventional Resurf devices, this technique provides a perfect flattening of the field profile without the requirement of an accurate charge balance. Experimental results show an increase in steady-state breakdown voltage from 19 to 85 V for a device having 4 /spl mu/m drift regions doped at 5e16 cm/sup -3/, with corresponding R/sub on/ below the silicon limit.

Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection

We present results of a novel punch-through diode structure which uses a thin SiGe emitter to effectively suppress impact-ionization related (BVce0) effects that typically start to dominate the electrical characteristics of conventional punch-through devices at voltages above 2.5..3.0 V, resulting in the occurrence of negative resistances (snap-back) and severely limiting the application range.

Low-voltage SiGe power diodes

Power diodes with an ultra-thin SiGe anode region and a breakdown voltage of 40 V have been fabricated. Experimental results have been compared with an analytical model, developed to explore the limits of this SiGe power-diode technology.

An efficient simulation method for linking bipolar process and device optimization to circuit performance

An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.<<ETX>>