Hendrik G. A. Huizing

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

P. Deixler, A. Rodriguez, W. De Boer, H. Sun, R Colclaser, D. Bower, N. Bell, A. Yao’, RBrock’, Y. Bouttement.’, G.A.M. Hurkx4>, L.F. TiemeijeS, J.C.J. Paassehens4”, H.G.A Huizing”,D.M.H. Hartskeer14, P. Agamal’, P.H.C Magnee’, E. Aksen’ and J.W. Slotboom6 Philips Semiconductors, 2070 Route 52, P.O. Box 1279, Hopewell Junction, NY 12533, USA ’Philips RF Device Modeling Group, San Jose, USA; ’ Philips RF Modeling Group, Caen, France ‘ Philips Natlab, Eindboven, The Netherlands; ’ Philips Research Leuven, Leuven, Belgium; ‘Univ. Delft, Netherlands Email: Peter.Deixler@philips.com, Phone: ++1 845 902 1586 Abstract QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-BiCMOS technology for emerging microwave applications with NPN fr/f,, up to l30/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

Low energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF 2 . With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

Explorations for high performance SiGe-heterojunction bipolar transistor integration

Presents a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early effects, achieving f/sub T/=55 GHz and BV/sub CEO/=2.7 V. The transistor characteristics are well modeled by Mextram 504.

Cluster ripening and transient enhanced diffusion in silicon

Abstract Transient enhanced diffusion of boron marker layers following silicon ion implantation shows a complex behavior as a function of annealing temperature and time. In the initial phase of ripening, small clusters with low binding energy give rise to an extremely large interstitial supersaturation (∼106–107 at 600°C). As the clusters ripen into {113} defects the supersaturation drops to a level which remains almost constant with time until the {113} defects have dissolved. By inverse modeling of the Ostwald ripening process, values are extracted for several basic physical parameters: the energy barrier for boron-interstitial association, the dissociation energy Ediss of the migrating boron-interstitial species, and the interstitial self-diffusion product. The data are consistent with recent ab initio predictions that the migrating boron species is a boron-interstitial pair. Analysis of the detailed time evolution of TED allows us to extract Ediss for silicon clusters and {113} defects as a function of defect size, n. We find strong oscillations on Ediss in the size range 2

Base current tuning in SiGe HBT's by SiGe in the emitter

Npn-type SiGe heterojunction bipolar transistors (HBTs) have high cut-off frequencies, but low breakdown voltages due to their high current gain. We show that a SiGe layer in the emitter can increase the base current and hence the breakdown voltage while the collector current and cut-off frequency are not reduced. Simulations and first experimental results clearly confirm this effect.

The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

Transient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz 20 Ωcm, (b) 3 μm thick 20 Ωcm epitaxial Si layer (epi-layer) grown on a 20 Ωcm Cz substrate, and (c) 3 μm thick 20 Ωcm epi-layer grown on a 5 mΩcin Fz substrate. The level of oxygen is known to decrease from material type (a) to (c). The samples were implanted with 20 keV, 5×10 13 cm −2 boron and subjected to rapid thermal annealing (RTA) at various temperatures and times. The EA and TED were studied using spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS), respectively. Although the amount of TED is almost identical for the three substrates, the EA is found to be significantly higher in the epi-layers compared to Cz substrates. It is speculated that the trapping of vacancies by oxygen in the ion-damaged region leads to an increase in the interstitial supersaturation during annealing, which then results in enhanced boron clustering and reduced electrical activation in the peak of the implanted profile.

Ultra shallow boron base profile with carbon implantation

Double-polysilicon bipolar junction transistors with an ultra shallow implanted base are fabricated using Ge pre-amorphization. The effect of implanted C, both on suppressing transient enhanced diffusion and on the junction leakage, is studied.