Gordon A. Haller

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workshop on microelectronics and electron devices | 2007

Nirmal Ramaswamy; Venkat Ananthan; David K. Hwang; Ravi Iyer; Chandra Mouli; Allen McTeer; Sanh D. Tang; Kunal R. Parekh; Tim Owens; Young Pil Kim; Nanda Palaniappan; Jian Li; Steve Groothuis; Gordon A. Haller; Shixin Wang

A functional DRAM with higher data retention characteristics than a planar access device has been demonstrated, using a metal gate recessed access device (RAD). Chemical vapor deposition (CVD) and atomic layer deposition (ALD) were used to deposit titanium nitride (TiN) and tantalum nitride (TaN), respectively. CVD TiN and ALD TaN-CVD TiN laminate gate stacks were integrated with a RAD module. ALD TaN-CVD TiN laminate gates showed enhanced drive current (IDS), higher transconductance (GM), higher mobility (¿EFF) and reduced off current (IOFF) characteristics compared to CVD TiN gates. Device characteristics and reliability data for both the planar devices and RADs are presented. The ALD TaN-CVD TiN laminate metal gate RAD showed much improved data retention characteristics compared to a conventional planar device with a poly silicon gate. The optimum thickness of ALD TaN in the laminate stack is discussed.

Archive | 2008

Gordon A. Haller; Sanh D. Tang; Steve Cummings

Archive | 1990

Tyler A. Lowrey; Randal W. Chance; D. Mark Durcan; Ruojia Lee; Charles H. Dennison; Yauh-Ching Liu; Pierre C. Fazan; Fernando Gonzalez; Gordon A. Haller

Archive | 2013