Guy Lepage

High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-On-Insulator platform

A new generation of Silicon-on-Insulator fiber-to-chip grating couplers which use a silicon overlay to enhance the directionality and thereby the coupling efficiency is presented. Devices are realized on a 200 mm wafer in a CMOS pilot line. The fabricated fiber couplers show a coupling efficiency of -1.6 dB and a 3 dB bandwidth of 80 nm.

Silicon-organic hybrid (SOH) IQ modulator using the linear electro-optic effect for transmitting 16QAM at 112 Gbit/s

Advanced modulation formats call for suitable IQ modulators. Using the silicon-on-insulator (SOI) platform we exploit the linear electro-optic effect by functionalizing a photonic integrated circuit with an organic χ(2)-nonlinear cladding. We demonstrate that this silicon-organic hybrid (SOH) technology allows the fabrication of IQ modulators for generating 16QAM signals with data rates up to 112 Gbit/s. To the best of our knowledge, this is the highest single-polarization data rate achieved so far with a silicon-integrated modulator. We found an energy consumption of 640 fJ/bit.

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8 um

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8 μm is reported. The devices are fabricated on 200 mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5 dB) and good crosstalk characteristics (15-20 dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6 dB/cm.

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O’s

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared

Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning power (for a 2π phase shift) of 105 mW is achieved for a Ge-on-SOI structure which is lowered to 16 mW for a free standing phase shifter.

Silicon-Organic Hybrid MZI Modulator Generating OOK, BPSK and 8-ASK Signals for Up to 84 Gbit/s

We report on high-speed multilevel signal generation and arbitrary pulse shaping with silicon-organic hybrid (SOH) Mach-Zehnder interferometer (MZI) modulators. Pure phase modulation exploiting the linear electrooptic effect allows the generation of multiple modulations formats at highest speed such as 40-Gbit/s on-off-keying (OOK) and binary-phase-shift keying (BPSK) and 28-Gbd 4-ASK and 8-ASK with data rates up to 84 Gbit/s. Additionally, beside NRZ pulse shaping, for the first time, Nyquist pulse shaping with silicon modulators is demonstrated to enable multiplexing at highest spectral efficiency.

Using carrier-depletion silicon modulators for optical power monitoring

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

-1 V bias 67GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.

Fabrication-Tolerant Four-Channel Wavelength-Division-Multiplexing Filter Based on Collectively Tuned Si Microrings

We demonstrate a robust, compact and low-loss four-channel wavelength-division multiplexing (WDM) filter based on cascaded double-ring resonators (2RR) in silicon. The flat-top channel response obtained by the second-order filter design is exploited to compensate for the detrimental effects of local fabrication variations and their associated phase errors on the ring-based filter response. Full wafer-scale characterization of a cascaded, four-channel 2RR filter with channel spacing of 300 GHz shows an average worst-case insertion loss below 1.5 dB and an average worst-case crosstalk below -18 dB across the wafer, representing a substantial improvement over a first-order based ring (1RR) design. The robust 2RR filter design enables the use of a simple collective thermal tuning mechanism to compensate for global fabrication variations as well as for global temperature fluctuations of the WDM filter, the WDM laser source, or both. Highly uniform collective heating is demonstrated using integrated doped silicon heaters. The compact filter footprint of less than 50×50 μm2 per channel enables straightforward scaling of the WDM channel count to 8 channels and beyond. Such low-loss collectively tuned ring-based WDM filters can prove beneficial in scaling the bandwidth density of chip-level silicon optical interconnects.

56 Gb/s Germanium Waveguide Electro-Absorption Modulator

We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers with 220 nm top Si thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation at data rates as high as 56 Gb/s. Dynamic extinction ratios up to 3.3 dB are obtained by applying drive voltages of 2 V peak-to-peak, along with an optical insertion loss below 5.5 dB. The device has a low junction capacitance of just 12.8 fF, resulting in 12.8 fJ/bit of dynamic and ~1.2 mW of static power consumption in typical operating conditions. Wafer-scale performance data are presented and confirm the manufacturability of the device. The demonstrated modulator shows great potential for realizing high-density and low-power silicon photonic transceivers targeting short-reach optical interconnects at serial data rates of 56 Gb/s and beyond.