Henri Jussila

Polarization and thickness dependent absorption properties of black phosphorus

Black phosphorus (BP) has recently been rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of BP flakes. We observe that both the linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness in BP, completely different from other typical two-dimensional layered materials (e.g., graphene and the most studied transition metal dichalcogenides). We then use the nonlinear optical properties of BP for ultrafast (pulse duration down to ~786 fs in mode-locking) and large-energy (pulse energy up to >18 nJ in Q-switching) pulse generation in fiber lasers at the near-infrared telecommunication band ~1.5 μm. We observe that the output of our BP based pulsed lasers is linearly polarized (with a degree-of-polarization ~98% in mode-locking, >99% in Q-switching, respectively) due to the anisotropic optical property of BP. Our results underscore the relatively large optical nonlinearity of BP with unique polarization and thickness dependence, and its potential for polarized optical pulse generation, paving the way to BP based nonlinear and ultrafast photonic applications (e.g., ultrafast all-optical polarization switches/modulators, frequency converters etc.).Black phosphorus has been recently rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of black phosphorus thin films, indicating that both linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness. Then we employ the nonlinear optical property of black phosphorus for ultrafast (pulse duration down to ~786 fs in mode-locking) and large-energy (pulse energy up to >18 nJ in Q-switching) pulse generation in fiber lasers at the near-infrared telecommunication band ~1.5 {\mu}m. Our results underscore relatively large optical nonlinearity in black phosphorus and its prospective for ultrafast pulse generation, paving the way to black phosphorus based nonlinear and ultrafast photonics applications (e.g., ultrafast all-optical switches/modulators, frequency converters etc.).

Polarization and Thickness Dependent Absorption Properties of Black Phosphorus: New Saturable Absorber for Ultrafast Pulse Generation

Black phosphorus (BP) has recently been rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of BP flakes. We observe that both the linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness in BP, completely different from other typical two-dimensional layered materials (e.g., graphene and the most studied transition metal dichalcogenides). We then use the nonlinear optical properties of BP for ultrafast (pulse duration down to ~786 fs in mode-locking) and large-energy (pulse energy up to >18 nJ in Q-switching) pulse generation in fiber lasers at the near-infrared telecommunication band ~1.5 μm. We observe that the output of our BP based pulsed lasers is linearly polarized (with a degree-of-polarization ~98% in mode-locking, >99% in Q-switching, respectively) due to the anisotropic optical property of BP. Our results underscore the relatively large optical nonlinearity of BP with unique polarization and thickness dependence, and its potential for polarized optical pulse generation, paving the way to BP based nonlinear and ultrafast photonic applications (e.g., ultrafast all-optical polarization switches/modulators, frequency converters etc.).Black phosphorus has been recently rediscovered as a new and interesting two-dimensional material due to its unique electronic and optical properties. Here, we study the linear and nonlinear optical properties of black phosphorus thin films, indicating that both linear and nonlinear optical properties are anisotropic and can be tuned by the film thickness. Then we employ the nonlinear optical property of black phosphorus for ultrafast (pulse duration down to ~786 fs in mode-locking) and large-energy (pulse energy up to >18 nJ in Q-switching) pulse generation in fiber lasers at the near-infrared telecommunication band ~1.5 {\mu}m. Our results underscore relatively large optical nonlinearity in black phosphorus and its prospective for ultrafast pulse generation, paving the way to black phosphorus based nonlinear and ultrafast photonics applications (e.g., ultrafast all-optical switches/modulators, frequency converters etc.).

High Quality GaAs Nanowires Grown on Glass Substrates

We report for the first time the growth of GaAs nanowires directly on low-cost glass substrates using atmospheric pressure metal organic vapor phase epitaxy via a vapor-liquid-solid mechanism with gold as catalyst. Substrates used in this work were of float glass type typically seen in household window glasses. Growth of GaAs nanowires on glass were investigated for growth temperatures between 410 and 580 °C. Perfectly cylindrical nontapered nanowires with a growth rate of ~33 nm/s were observed at growth temperatures of 450 and 470 °C, whereas highly tapered pillar-like wires were observed at 580 °C. Nanowires grew horizontally on the glass surface at 410 °C with a tendency to grow in vertically from the substrate as the growth temperature was increased. X-ray diffraction and transmission electron microscopy revealed that the nanowires have a perfect zinc blende structure with no planar structural defects or stacking faults. Strong photoluminescence emission was observed both at low temperature and room temperature indicating a high optical quality of GaAs nanowires. Growth comparison on impurity free fused silica substrate suggests unintentional doping of the nanowires from the glass substrate.

Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics.

Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under environmental conditions and the lack of well-established large-area synthesis protocols hinder its applications. Here, the authors demonstrate a stable black phosphorus ink suitable for printed ultrafast lasers and photodetectors.

Surface plasmon resonance for characterization of large-area atomic-layer graphene film

Characterization of large-area thin films with atomic-scale resolution is challenging but in great demand for diverse applications (e.g., nanotechnology and sensing). Here, we use the Surface Plasmon Resonance (SPR) method to characterize both the thickness and refractive index of chemical-vapor-deposition (CVD)-grown graphene films. The measured refractive index and extinction coefficient values of the CVD-grown graphene monolayer at 670 nm wavelength are 3.135 and 0.897, respectively. Our results demonstrate that SPR shifts generated by graphene films are large (i.e., ∼1°/nm), almost tenfold larger than that observed in SPR measurements of organic monolayers. We find that this significantly large SPR shift easily enables the thickness of a large area sample (i.e., ∼mm2) to be determined with subnanometer-scale resolution. We show that the SPR method can identify thickness of different graphene layers and give an estimate of ∼0.37  nm for the thickness of the CVD-grown graphene layer, which agrees extremely well with the 0.335 nm reported for layer-to-layer carbon atom distance of graphite crystals. Our results open the avenue to fast and cost-effective simultaneous characterization of various parameters (including thickness and optical constants) of thin films at the atomic-scale resolution. The presented characterization method can be applied both to physical characterizations of various two-dimensional layered materials as well as to the use of these layered materials for biosensing applications as shown earlier, due to the favorable properties of graphene plasmons.

Enhancement of the third-order optical nonlinearity in ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition

We investigate the third-order optical nonlinearity in ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition and show that the third-order optical nonlinearity can be enhanced by nanoscale engineering of the thin film structure. The grain size of the polycrystalline ZnO film is controlled by varying the thickness of the ZnO layers in the nanolaminate in which thin (∼2 nm) amorphous Al2O3 layers work as stopping layers for ZnO crystal growth. Nanoscale engineering enables us to achieve a third harmonic generated signal enhancement of ∼13 times from the optimized nanolaminate structure compared to a ZnO reference film of comparable thickness.

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

High quality crystallinity controlled ALD TiO2 for waveguiding applications

We demonstrate a novel atomic layer deposition (ALD) process to make high-quality nanocrystalline titanium dioxide (TiO(2)) with intermediate Al(2)O(3) layers to limit the crystal size. The process is based on titanium chloride (TiCl(4))+water and trimethyl aluminum (TMA)+ozone processes at 250°C deposition temperature. The waveguide losses measured using a prism coupling method for 633 and 1551 nm wavelengths are as low as 0.2±0.1 dB/mm with the smallest crystal size, with losses increasing with crystal size. In comparison, plain TiO(2) deposited at 250°C without the intermediate Al(2)O(3) layers shows high scattering losses and is not viable as waveguide material. The third-order optical nonlinearity decreases with smaller crystal size as verified by third-harmonic generation microscopy but still remains high for all samples. Crystallinity controlled ALD-grown TiO(2) is an excellent candidate for various optical applications, where good thermal stability and high third-order optical nonlinearity are needed.

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

Nonlinear Optics with 2D Layered Materials

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.