Hector Sanchez

Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors

A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies

Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor

A reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology. The reduction of supply grid voltage transients has enhanced microprocessor performance by approximately 10% without increasing the chip area or power consumption

Technology and Design Cooperation: High-K MIM Capacitors for Microprocessor, IO, and Clocking

In this work a high-K MIM capacitor module has been described that has been shown to improve the frequency of microprocessors, stabilize the power supply noise of IOs and positively affect the resulting data eyes for high speed IO. Furthermore, improvements in high speed clocking are also achieved.

High performance, highly reliable FD/SOI I/O MOSFETs in contemporary high-performance PD/SOI CMOS

Integration of fully-depleted SOI (FD/SOI) MOSFETs for high performance 3.3 V/2.5 V I/O applications in contemporary high-performance partially-depleted SOI (PD/SOI) CMOS is reported for the first time. The FD/SOI MOSFETs feature dual etch-stop layer (dESL) stressor, optimized (minority) carrier lifetime killing implant in source/drain extension, and optimized in-situ steam generated (ISSG) gate oxidation process.

Technology, Design, and Implementation of High-K MIM Capacitors for High di/dt Applications: Microprocessor, IO, and Clocking

In this work a MIM capacitor used to decouple the internal power supply is shown. The 8fF/um² planar MIM capacitors of the 90 nm SOI technology are formed by physical vapor deposition of alternating layers of HfO₂ and Ta₂O₅ dielectrics between TaN electrodes.