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Dive into the research topics where Herbert Vonach is active.

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Featured researches published by Herbert Vonach.


SPIE's 27th Annual International Symposium on Microlithography | 2002

Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)

Hans Loeschner; Gerhard Stengl; Herbert Buschbeck; Alfred Chalupka; Gertraud Lammer; Elmar Platzgummer; Herbert Vonach; Patrick W.H. de Jager; Rainer Kaesmaier; Albrecht Ehrmann; Stefan Hirscher; Andreas Wolter; Andreas Dietzel; R. Berger; Hubert Grimm; B. D. Terris; Wilhelm H. Bruenger; Dieter Adam; Michael Boehm; Hans Eichhorn; Reinhard Springer; Joerg Butschke; Florian Letzkus; Paul Ruchhoeft; John C. Wolfe

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.


Journal of Micro-nanolithography Mems and Moems | 2003

Large-field particle beam optics for projection and proximity printing and for maskless lithography

Hans Loeschner; Gerhard Stengl; Herbert Buschbeck; Alfred Chalupka; Gertraud Lammer; Elmar Platzgummer; Herbert Vonach; Patrick W.H. de Jager; Rainer Kaesmaier; Albrecht Ehrmann; Stefan Hirscher; Andreas Wolter; Andreas Dietzel; Ru¨diger Berger; Hubert Grimm; B. D. Terris; Wilhelm H. Bruenger; Gerhard Gross; Olaf Fortagne; Dieter Adam; Michael Bo¨hm; Hans Eichhorn; Reinhard Springer; Joerg Butschke; Florian Letzkus; Paul Ruchhoeft; John C. Wolfe

Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In cooperation with IBM Storage Technology Division, ion projection patterning of magnetic media layers has been demonstrated. With masked ion beam proximity techniques, unique capabilities for lithography on nonplanar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBL) and masked ion beam direct structuring (MIBS) tool with sub-20-nm resolution capability within 88-mm□ exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume projection maskless lithography (projection-ML2) is discussed. In the case of projection-ML2 there are advantages of using electrons instead of ions. Including gray scaling, an improved concept for a ⩽50-nm projection-ML2 system is presented with the potential to meet a throughput of 20 wafers per hour (300 mm).


Journal of Vacuum Science & Technology B | 1999

Experimental results of the stochastic Coulomb interaction in ion projection lithography

P. W. H. de Jager; G. Derksen; B. Mertens; E. Cekan; Gertraud Lammer; Herbert Vonach; Herbert Buschbeck; M. Zeininger; C. Horner; H. Löschner; Gerhard Stengl; Arno Jan Bleeker; Jozef Petrus Henricus Benschop; F. Shi; B. Volland; P. Hudek; H. Heerlein; I. W. Rangelow; Rainer Kaesmaier

Throughput and resolution are connected in ion and electron projection lithography (IPL and EPL) because of the space charge and Coulomb interaction between the particles in the beam. Due to the lack of experimental data it was not possible to estimate this effect accurately. Therefore an experiment setup has been developed which has the most significant parameters close to planned IPL exposure tools. These parameters are the linear particle density and the crossover shape and size. The stochastic Coulomb interaction blur, depending on the total beam current, has been measured in about 100 settings of the beam current, beam energy, and crossover shape. The results show that the stochastic Coulomb interaction blur scales to the power of 0.587±0.101 (1σ) of the linear particle density in a system with a uniform crossover of 400 μm. To decrease the current density in crossover IPL systems can have an aberrated crossover. In case of this type of crossover of 670 μm the current dependency is 0.820±0.072 (1σ). ...


Journal of Vacuum Science & Technology B | 1995

Distortion analysis of stencil masks with stress‐relief structures

John C. Wolfe; Alfred Chalupka; H. Löschner; Gerhard Stengl; Herbert Vonach; Alex R. Shimkunas; Phillip E. Mauger

We present an exact solution to an axially symmetric continuum model of distortion in stencil masks. A correction procedure is studied where the pattern displacement vectors are calculated from a linear approximation to the pattern distribution function. For practical mask patterns this can reduce distortion to near the levels needed for very large scale integration. Additional gains can be achieved by using a ring of perforations around the integrated circuit field to reduce stress. Corrected distortion figures below 20 nm on a 60 mm mask seem possible.


Journal of Vacuum Science & Technology B | 2000

Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment

B. Volland; Feng Shi; H. Heerlein; Ivo W. Rangelow; P. Hudek; I. Kostic; E. Cekan; Herbert Vonach; Hans Loeschner; C. Horner; Gerhard Stengl; Herbert Buschbeck; M. Zeininger; Arno Jan Bleeker; Jozef Petrus Henricus Benschop

For the ion projection lithography space charge experiment [P.W.H. de Jager et al., J. Vac. Sci. Technol. B 17, 3098 (1999)] a suitable stencil test mask has been realized and used. This article addresses the stress engineering and fabrication process of this specific test mask with openings in the range of some few 100 nm up to some 100 μm. This large difference in stencil pattern dimensions causes reactive ion etching (RIE) lag (dependence of the etch rate on feature size and pattern density) during the fabrication process and considerable stress variations across the membrane field. The solution to these problems was by (i) implementing novel doping technologies to create variable thickness areas on the membrane serving as reinforcement and stress relief structures, and (ii) adjusting the design to feature sizes and pattern densities to the same order of magnitude for the e-beam lithography and RIE processing steps. The etching of the openings through the 3 μm thick Si membrane was done by inductively ...


Journal of Vacuum Science & Technology B | 1997

Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover

P. Kruit; J. E. Barth; G. Lammer; Alfred Chalupka; Herbert Vonach; H. Löschner; Gerhard Stengl

The allowable current in ion beam projection lithography is limited by stochastic Coulomb interactions. Theories for the dependence of these interactions on the parameters of the system, i.e., length, beam energy, print size, crossover diameter, etc. are thus important to guide the design of future machines. All existing theories on blur from stochastic Coulomb interaction assume a homogeneous current distribution in the crossover, where a large part of the blur is produced. However, in actual lithography machines, the crossover may be substantially broadened by the spherical aberration of the ion lenses, thus giving a very inhomogeneous current distribution in the crossover. In most analytical theories, the stochastic blur is independent of the radius of the homogeneously field crossover rc for very small crossovers, and relates to rc as (1/rc)1/2 or (1/rc)1/3 for larger ones. If aberration broadening could do the same, the effect of broadening the crossover from rc=1.5 to 50 μm would decrease the blur b...


Microelectronic Engineering | 2000

Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in projection beam lithography

P.W.H. de Jager; B. Mertens; E. Munro; E. Cekan; Gertraud Lammer; Herbert Vonach; Herbert Buschbeck; M. Zeininger; C. Horner; H. Löschner; Gerhard Stengl; Arno Jan Bleeker

Coulomb interaction limits the beam current for a required resolution but it can be influenced by the layout of the optical system. Therefore it is necessary to obtain design information for future charged particle lithography tools. Monte Carlo simulations are an important tool in this design. Two of these programs, COUTRAC and BOERSCH, are compared with experimental data of an Ion Projection Lithography (IPL) set-up. The results of COUTRAC are in agreement with the measurements to within 19% in case of a uniform cross-over. With an aberrated cross-over the difference increases to 126 % near the axis since the experiment showed no increase of Coulomb interaction over the inner quarter of the exposure field while both Monte Carlo models show a monotone increase to the axis.


Archive | 2003

Maskless particle-beam system for exposing a pattern on a substrate

Elmar Platzgummer; Hans Loeschner; Gerhard Stengl; Herbert Vonach; Alfred Chalupka; Gertraud Lammer; Herbert Buschbeck; Robert Nowak; Till Windischbauer


Archive | 1999

PARTICLE MULTIBEAM LITHOGRAPHY

H. Löschner; Gerhard Stengl; Herbert Vonach; Elmar Platzgummer


Archive | 2003

MASKLESS PARTICLE BEAM DEVICE FOR EXPOSING PATTERN ON SUBSTRATE

Herbert Buschbeck; Alfred Chalupka; Gertraud Lammer; Hans Loeschner; Robert Nowak; Elmar Platzgummer; Gerhard Stengl; Herbert Vonach; Till Windischbauer; アルフレット カルプカ; エルマール プラッツグンマー; ゲルトラウト ランマー; ゲルハルト シュテングル; ティル ヴィンディッシュバウアー; ハンス ローシュナー; ヘルベルト フォーナッハ; ヘルベルト ブッシュベック; ロベルト ノヴァク

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