Hidekimi Kadokura

PRODUCTION OF BIS(ALKYLCYCLOPENTADIENYL) RUTHENIUM COMPLEX AND PRODUCTION OF RUTHENIUM-CONTAINING THIN FILM USING THE SAME

Method for manufacturing hafnium silicate film by atom layer adsorption and deposition method

Method of manufacturing layered ferroelectric Bi containing film

Raw material for forming a strontium-containing thin film and process for preparing the raw material

TERTIARY AMYLIMIDETRIS(DIMETHYLAMIDE)TANTALUM, METHOD FOR PRODUCING IT, AND RAW MATERIAL SOLUTION FOR MOCVD AND METHOD FOR FORMING TANTALUM NITRIDE FILM THEREWITH

Method of manufacturing bi-layered ferroelectric thin film

High-purity tetrakis(dimethylamino)hafnium, method for producing the same and method for producing gate insulation film by using the same

Zirconium alkoxytris (β-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film

Production of bismuth laminar ferroelectric thin film

Tert-amylimido-tris(dimethylamido)-niobium, method for producing the same, raw material solution for ald using the same and method for forming niobium nitride film or niobium oxide film by using the same