Hieu Van Tran

Split-Gate Floating Poly SuperFlash ® Memory Technology, Design, and Reliability

Split-gate embedded flash memory technology has been around for a couple of decades and has become a de facto standard for embedded products such as microcontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM or stacked-gate solutions. This chapter covers the fundamentals of split-gate embedded flash memories with an emphasis on SST’s widely adopted SuperFlash® memory technology as an example to demonstrate the benefits of a split-gate embedded flash-memory technologies. The fundamentals of SuperFlash technology, design, reliability, and scalability are discussed in detail in various sections, which would provide a detailed understanding of a split-gate, embedded flash-memory technology.

A precision high voltage wave-shaper for multi-Gbit source side injection MLC NOR flash memory

A precision high voltage wave-shaper is demonstrated in 0.18/spl mu/m 64-256Meg NOR SSI flash MLC memory chip to demonstrate feasibility of a /spl sim/8bit accuracy HV delivering system for 1.8V multi giga bit (>4 Gbit) density 4bits/cell multilevel memory. Dynamic adaptive HV bias scheme (DYAHV) and unique nested array driving loop shown for the first time in this work.