Ho-Myoung An

Realization of Two-bit Operation by Bulk-biased Programming Technique in SONOS NOR Array with Common Source Lines

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.⡌ឫഀĀ᐀會Ā᐀㡆ﶖ⨀쁌ឫഀĀ᐀會Ā᐀遆ﶖ⨀郞ග瀀ꀏ會Āue846ﶖ⨀〲岒Ā᐀會Ā᐀䁇ﶖ⨀젲岒Ā㰀會Ā㰀顇ﶖ⨀끩uf697Ā㈀會Ā㈀uf047ﶖ⨀䡪uf697ഀĀ᐀會Ā᐀䡈ﶖ⨀ue06auf697Ā᐀會Ā᐀ꁈﶖ⨀硫uf697ഀĀ저會Ā저uf848ﶖ⨀샟ගĀ저會Ā저偉ﶖ⨀栰岒ഀĀ저會Ā저ꡉﶖ⨀1岒Ā저會Ā저Jﶖ⨀惝ගu0600Āu0600會Āu0600塊ﶖ⨀uf8ddග䈀Ā切會Ā切끊ﶖ⨀⣟ගĀ搀會Ā搀ࡋﶖ⨀큭킢Ā저會Ā저恋ﶖ⨀桮킢Ā저會Ā저롋ﶖ⨀

Investigation of Endurance Degradation in a CTF NOR Array Using Charge Pumping Methods

Copyright ©2016 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx.doi.org/10.4313/TEEM.2016.17.1.25 OAK Central: http://central.oak.go.kr TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS Vol. 17, No. 1, pp. 25-28, February 25, 2016

An Investigation of Locally Trapped Charge Distribution using the Charge Pumping Method in the Two-bit SONOS Cell

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.