Hongchao Liu

Negative magnetoresistance in Dirac semimetal Cd3As2

A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 1017 cm−3 at 300 K to 2.2 × 1016 cm−3 below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

High-field linear magneto-resistance in topological insulator Bi2Se3 thin films

Linear magneto-resistance is observed in high magnetic field in topological insulator Bi2Se3 films. As revealed by tilted magnetic field measurement, this linear magneto-resistance is associated with the gapless topological surface states and of quantum origin. In the ultra-thin limit, the inter-surface tunneling induced surface state gap opening quenches the linear magneto-resistance. Instead, weak negative magneto-resistance is observed in high magnetic fields in ultra-thin films.

Two-dimensional superconductivity at the interface of a Bi 2 Te 3 /FeTe heterostructure

The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface, which is induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer, though there is no clear-cut evidence that the observed superconductivity is induced by the topological surface states. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.

Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films

A linear magnetoresistance (LMR) with strong temperature dependence and peculiar non-symmetry with respect to the applied magnetic field is observed in high-index (221) Bi2Se3 films. Different from the LMR observed in the previous studies which emphasize the role of gapless linear energy dispersion, this LMR is of disorder origin and possibly arises from the electron surface accumulation layer of the film. Besides, an abnormal negative magneto-resistance that shows a non-monotonic temperature dependence and persists even at high temperatures and in strong magnetic fields is also observed.

Anisotropic Topological Surface States on High‐Index Bi2Se3 Films

A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.

Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy

We report the growth of single-domain epitaxial Bi2Se3 films on InP(111)A substrate by molecular-beam epitaxy. Nucleation of Bi2Se3 proceeds at steps, so the lattices of the substrate play the guiding role for a unidirectional crystalline film in the step-flow growth mode. There exists a strong chemical interaction between atoms at the heterointerface, so the growth does not follow the van der Waals epitaxy process. A mounded morphology of thick Bi2Se3 epilayers suggests a growth kinetics dictated by the Ehrlich-Schwoebel barrier. The Schubnikov de Haas oscillations observed in magnetoresistance measurements are attributed to Landau quantization of the bulk states of electrons.

Chirality dependence of the energetics and electronic properties of Li-intercalated 4 Å carbon nanotubes

Using first principles calculations, we explore the energetics of intercalating Li atoms into the interior of 4 A diameter single-wall carbon nanotubes. The change of electronic structure induced by Li intercalation is studied and we find that a rigid-band picture offers a good description near the Fermi level. There is a marked dependence of the Li binding energy on the chirality of the 4 A tubes, which is traced to the different electron affinity of these tubes. We also find that for the (5,0) tube, there is a range of Li doping concentration in which the energy is favorable and the density of states at the Fermi level increases significantly.

Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak antilocalization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.

Origin of Bias-Independent Conductance Plateaus and Zero-bias Conductance Peaks in Bi 2 Se 3 /NbSe 2 Hybrid Structures

Superconducting proximity effect (SPE) in topological insulator (TI) and superconductor (SC) hybrid structure has attracted intense attention in recent years in an effort to search for mysterious Majorana fermions (MFs) in condensed matter systems. Here we report on the SPE in a Bi2Se3/NbSe2 junction fabricated with an all-dry transfer method. Resulting from the highly transparent interface, two sharp resistance drops are observed at 7 K and 2 K, respectively, corresponding to the superconducting transition of NbSe2 flake and the SPE induced superconductivity in Bi2Se3 flake. Experimentally measured differential conductance spectra exhibit a bias-independent conductance plateau (BICP) in the vicinity of zero bias below 7 K. As temperatures further decrease a zero bias conductance peak (ZBCP) emerges from the plateau and becomes more enhanced and sharpened at lower temperatures. Our numerically simulated differential conductance spectra reproduce the observed BICP and ZBCP and show that the SPE in topological surface states (TSS) is much stronger than that in the bulk states of Bi2Se3. The SPE induced superconducting gap for the TSS of Bi2Se3 is comparable to that of NbSe2 and gives rise to the observed BICP below 7 K. In contrast, the SPE induced superconducting gap for the bulk states of Bi2Se3 is an order of magnitude smaller than that of NbSe2 and superconducting TSS. These weakly paired bulk states in Bi2Se3 give rise to the ZBCP below 2 K. Our study has clearly unveiled the different roles of TSS and bulk stats in SPE, clarified the physical origin of the SPE induced features, and shined light on further investigation of SPE and MF in TI/SC hybrid structures.

Pseudogap and proximity effect in the Bi 2 Te 3 /Fe 1+y Te interfacial superconductor

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3.