Honghao Xu

251 fs pulse generation with a Nd3+-doped Ca3Gd2(BO3)4 disordered crystal

A diode-pumped passively mode-locked femtosecond Nd:Ca3Gd2(BO3)4 disordered crystal laser has been investigated for the first time, to our knowledge. The passive mode locking of the laser is initiated with a semiconductor saturable absorption mirror (SESAM). Stable mode-locked pulses with 251 fs pulse width, 87 MHz repetition rate, and 37 mW average output power have been demonstrated.

High-power passively Q-switched Yb:YCa 4 O(BO 3 ) 3 laser with a GaAs crystal plate as saturable absorber

We report on efficient high-power passively Q-switched operation of a Yb:YCa4O(BO3)3 laser with a GaAs crystal plate acting as the saturable absorber. An average output power of 5.7 W at 1032 nm is generated at a pulse repetition rate of 166.7 kHz when the incident pump power is 26.8 W, with a slope efficiency determined to be 24.5%. The averaged pulse energy achieved is roughly 30 μJ and is increased to about 40 μJ when the output coupling used changes from 30% to 50%, while the shortest pulse width is measured to be 153 ns.

High-energy passively Q-switched operation of Yb:GdCa 4 O(BO 3 ) 3 laser with a GaAs semiconductor saturable absorber

High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber.

Passively Q-switched operation of an Yb:CNGG disordered garnet laser with a GaAs crystal plate as the saturable absorber

Efficient stable passively Q-switched operation of an Yb:CNGG disordered garnet laser is demonstrated with a GaAs crystal plate as the saturable absorber. An average output power of 1.76 W is produced at a pulse repetition rate of as high as 166.7 kHz, with optical-to-optical and slope efficiencies of 23.2 and 33%, respectively. The shortest pulse duration achieved was 99.5 ns.

Repetitively Q-switched laser operation of a miniature Yb:LuPO 4 crystal rod

We report on efficient repetitively Q-switched laser operation of a miniature Yb:LuPO4 crystal rod with emission wavelengths ranging from 1000 to 1010 nm, at different repetition rates over a range of 1−50 kHz. An average output power of 6.55 W was produced at 50 kHz of repetition rate, with a slope efficiency of 40%; in a low-repetition-rate operation at 2 kHz, the maximum pulsed output power generated was 1.43 W, with pulse energy, duration, and peak power being, respectively, 0.715 mJ, 12.5 ns, and 57.2 kW.

Passively Q-Switched Yb:YCa 4 O(BO 3 ) 3 /GaAs Laser Generating 1 mJ of Pulse Energy

A compact high-energy Yb:YCOB laser passively Q-switched with a GaAs saturable absorber is demonstrated, producing an average output power of 1.02 W at 1022.7 nm, at a pulse repetition rate of 1 kHz, with pulse energy, duration, and peak power being, respectively, 1.02 mJ, 13.6 ns, and 75 kW.

High-energy passively Q-switched laser operation of Yb:Ca 3 La 2 (BO 3 ) 4 disordered crystal

Efficient high-energy passively Q-switched laser operation was demonstrated with Yb:Ca₃La₂(BO₃)₄ disordered crystal, producing an average output power of 3.0 W at 1018.7 nm, at a pulse repetition frequency of 5.0 kHz; the resulting pulse energy, duration, and peak power were 600 μJ, 5.3 ns, and 113.2 kW, respectively.

Passive Q-Switching of a Yb:LuVO4 Laser with Cr4+:YAG: Approaching the Intrinsic Upper Limit of Repetition Rate

We demonstrate a diode pumped Yb:LuVO 4 laser that can be passively Q-switched by a Cr 4+ :YAG saturable absorber having an initial transmission as high as 99.3%. A maximum pulsed output power of 2.35 W is generated at a repetition rate of 285.7 kHz, approaching or very near the intrinsic upper limit imposed by the recovery time of the Cr 4+ :YAG saturable absorber, and the resulting pulse energy, duration and peak power are, respectively, 8.2 μJ, 39.2 ns and 0.209 kW.

Anisotropy in spectroscopic and laser properties of Yb:Sr 3 La 2 (BO 3 ) 4 disordered crystal

We report, for the first time to our knowledge, on the polarized absorption and emission spectra and efficient laser action of the Yb:Sr3La2(BO3)4 disordered crystal. The strongest absorption and emission occur at about 977 nm for polarization direction parallel to the crystallographic b axis, with the peak absorption and emission cross-sections amounting, respectively, to 1.95 × 10−20 and 2.45 × 10−20 cm2. Efficient continuous-wave laser action is demonstrated with a-, b-, and c-cut crystal samples longitudinally pumped by a 976-nm diode laser, producing an output power of up to 8.2 W with an optical-to-optical efficiency of 32% with respect to incident pump power. Depending on the output coupling utilized, the laser action could exhibit a transition from single-polarization oscillation to dual-orthogonal-polarization oscillation at a certain pump level.