Hugh Churchill

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W(-1) and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm(2)/(V·s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.

Two-dimensional crystals: Phosphorus joins the family

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A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.

Yongjie Hu, Hugh O. H. Churchill, David J. Reilly, Jie Xiang, Charles M. Lieber, 3 and Charles M. Marcus Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA (Dated: February 1, 2008)One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.

Correlation of pH-dependent surface interaction forces to amino acid adsorption: Implications for the origin of life

Abstract We used an atomic force microscope (AFM) with a modified tip to measure interaction forces between a silica microsphere and surfaces of quartz, calcite, and albite over a range of pH. Minima in the magnitude of electrostatic repulsion or attraction appeared near the point of zero charge (pHpzc) values for quartz (≈2.8), calcite (9.5), albite (2.6), and silica glass (3.5). We observed small, but significant, differences in pHpzc values for the (100), (101), and (011) faces of quartz. In order to correlate mineral surface charges with ionic characteristics and corresponding isoelectric points (pI) of amino acids, we immersed quartz and calcite in solutions of six amino acids. Quartz (pHpzc ≈ 2.8) tends to adsorb amino acids most strongly when pHpzc and pI differ significantly. Thus quartz adsorbs lysine (pI = 9.74) more strongly than amino acids with lower pI. In contrast, calcite (pHpzc = 9.5) adsorbs a variety of amino acids with a range of pI. Calcite thus represents a more plausible template than quartz for prebiotic selection and organization of homochiral polypeptides.

Relaxation and Dephasing in a Two-Electron \(^{13}C\) Nanotube Double Quantum Dot

We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time T1 first decreases with a parallel magnetic field and then goes through a minimum in a field of 1.4 T. We attribute both results to the spin-orbit-modified electronic spectrum of carbon nanotubes, which at high field enhances relaxation due to bending-mode phonons. The inhomogeneous dephasing time T{2} is consistent with previous data on hyperfine coupling strength in 13C nanotubes.

Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.

We report high quality graphene and WSe2 devices encapsulated between two hexagonal boron nitride (hBN) flakes using a pick-up method with etched hBN flakes. Picking up prepatterned hBN flakes to be used as a gate dielectric or mask for other 2D materials opens new possibilities for the design and fabrication of 2D heterostructures. In this Letter, we demonstrate this technique in two ways: first, a dual-gated graphene device that is encapsulated between an hBN substrate and prepatterned hBN strips. The conductance of the graphene device shows pronounced Fabry-Pérot oscillations as a function of carrier density, which implies strong quantum confinement and ballistic transport in the locally gated region. Second, we describe a WSe2 device encapsulated in hBN with the top hBN patterned as a mask for the channel of a Hall bar. Ionic liquid selectively tunes the carrier density of the contact region of the device, while the hBN mask allows independent tunability of the contact region for low contact resistance. Hall mobility larger than 600 cm(2)/(V·s) for few-layer p-type WSe2 at 220 K is measured, the highest mobility of a thin WSe2 device reported to date. The observations of ballistic transport in graphene and high mobility in WSe2 confirm pick-up of prepatterned hBN as a versatile technique to fabricate ultraclean devices with high quality contact.

Electron–nuclear interaction in 13 C nanotube double quantum dots

For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence or, if controlled effectively, a resource allowing storage and retrieval of quantum information. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined double quantum dots with integrated charge sensors made from single-walled carbon nanotubes with a variable concentration of 13C (nuclear spin I=1/2) among the majority zero-nuclear-spin 12C atoms. Spin-sensitive transport in double-dot devices grown using methane with the natural abundance (~ 1%) of 13C is compared with similar devices grown using an enhanced (~99%) concentration of 13C. We observe strong isotope effects in spin-blockaded transport, and from the dependence on external magnetic field, estimate the hyperfine coupling in 13C nanotubes to be on the order of 100 micro-eV, two orders of magnitude larger than anticipated theoretically. 13C-enhanced nanotubes are an interesting new system for spin-based quantum information processing and memory, with nuclei that are strongly coupled to gate-controlled electrons, differ from nuclei in the substrate, are naturally confined to one dimension, lack quadrupolar coupling, and have a readily controllable concentration from less than one to 10^5 per electron.

Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on an

Carbon nanotubes for coherent spintronics

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