Hwan-Jin Jeon

High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds

The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure.

Fabrication of 10 nm-Scale Complex 3D Nanopatterns with Multiple Shapes and Components by Secondary Sputtering Phenomenon

We introduce an advanced ultrahigh-resolution (∼ 15 nm) patterning technique that enables the fabrication of various 3D high aspect ratio multicomponents/shaped nanostructures. This methodology utilizes the repetitive secondary sputtering phenomenon under etching plasma conditions and prepatterned fabrication control. The secondary sputtering phenomenon repetitively generates an angular distribution of target particles during ion-bombardment. This method, advanced repetitive secondary sputtering lithography, provides many strategies to fabricate complex continuous patterns and multilayer/material patterns with 10 nm-scale resolution. To demonstrate the versatility of this method, we show induced vertical alignment of liquid crystals (LCs) on indium-tin-oxide (ITO) grid patterns without any alignment layers. The ITO grid pattern fabricated in this method is found to have not only an alignment capability but also electrode properties without electrical or optical damage.

Highly Enhanced Fluorescence Signals of Quantum Dot-Polymer Composite Arrays Formed by Hybridization of Ultrathin Plasmonic Au Nanowalls.

Enhancement of the fluorescence intensity of quantum dot (QD)-polymer nanocomposite arrays is an important issue in QD studies because of the significant reduction of fluorescence signals of such arrays due to nonradiative processes in densely packed polymer chains in solid films. In this study, we enhance the fluorescence intensity of such arrays without significantly reducing their optical transparency. Enhanced fluorescence is achieved by hybridizing ultrathin plasmonic Au nanowalls onto the sidewalls of the arrays via single-step patterning and hybridization. The plasmonic Au nanowall induces metal-enhanced fluorescence, resulting in a maximum 7-fold enhancement of the fluorescence signals. We also prepare QD nanostructures of various shapes and sizes by controlling the dry etching time. In the near future, this facile approach can be used for fluorescence enhancement of colloidal QDs with plasmonic hybrid structures. Such structures can be used as optical substrates for imaging applications and for fabrication of QD-LED devices.

Well-Defined and High Resolution Pt Nanowire Arrays for a High Performance Hydrogen Sensor by a Surface Scattering Phenomenon

Developing hydrogen (H2) sensors with a high sensitivity, rapid response, long-term stability, and high throughput is one of the critical issues in energy and environmental technology [Hübert et al. Sens. Actuators, B 2011, 157, 329]. To date, H2 sensors have been mainly developed using palladium (Pd) as the channel material because of its high selectivity and strong affinity to the H2 molecule [(Xu et al. Appl. Phys. Lett. 2005, 86, 203104), (Offermans et al. Appl. Phys. Lett. 2009, 94, 223110), (Yang et al. Nano Lett. 2009, 9, 2177), (Yang et al. ACS Nano 2010, 4, 5233), and (Zou et al. Chem. Commun. 2012, 48, 1033)]. Despite significant progress in this area, Pd based H2 sensors suffer from fractures on their structure due to hydrogen adsorption induced volumetric swelling during the α → β phase transition, leading to poor long-term stability and reliability [(Favier et al. Science 2001, 293, 2227), (Walter et al. Microelectron. Eng. 2002, 61–62, 555), and (Walter et al. Anal. Chem. 2002, 74, 1546)]. In this study, we developed a platinum (Pt) nanostructure based H2 sensor that avoids the stability limitations of Pd based sensors. This sensor exhibited an excellent sensing performance, low limit of detection (LOD, 1 ppm), reproducibility, and good recovery behavior at room temperature. This Pt based H2 sensor relies on a highly periodic, small cross sectional dimension (10–40 nm) and a well-defined configuration of Pt nanowire arrays over a large area. The resistance of the Pt nanowire arrays significantly decreased upon exposure to H2 due to reduced electron scattering in the cross section of the hydrogen adsorbed Pt nanowires, as compared to the oxygen terminated original state. Therefore, these well-defined Pt nanowire arrays prepared using advanced lithographic techniques can facilitate the production of high performance H2 sensors.

Cylindrical posts of Ag/SiO2/Au multi-segment layer patterns for highly efficient surface enhanced Raman scattering

We fabricated a regular array of Ag/SiO₂/Au multi-segment cylindrical nanopatterns to create a highly efficient surface enhanced Raman scattering (SERS) active substrate using an advanced soft-nanoimprint lithographic technique. The SERS spectra results for Rhodamine 6G (R6G) molecules on the Ag/SiO₂/Au multi-segment nanopatterns show that the highly ordered patterns and interlayer thickness are responsible for enhancing the sensitivity and reproducibility, respectively, The multi-segment nanopattern with a silica interlayer generates significant SERS enhancement (~EF = 1.2 x 10⁶) as compared to that of the bimetallic (Ag/Au) nanopatterns without a dielectric gap (~EF = 1.0 x 10⁴). Further precise control of the interlayer distances between the two metals plays an essential role in enhancing SERS performance for detecting low concentrations of analytes such as fluorescent (Rhodamine 6G) and DNA molecules. Therefore, the highly ordered multi-segment patterns provide great sensitivity and reproducibility of SERS based detection, resulting in a high performance of the SERS substrate.

Complex High-Aspect-Ratio Metal Nanostructures by Secondary Sputtering Combined with Block Copolymer Self-Assembly.

High-resolution (10 nm), high-areal density, high-aspect ratio (>5), and morphologically complex nanopatterns are fabricated from a single conventional block copolymer (BCP) structure with a 70 nm scale resolution and an aspect ratio of 1, through the secondary-sputtering phenomenon during the Ar-ion-bombardment process. This approach provides a foundation for the design of new routes to BCP lithography.

Patterned nano-sized gold dots within FET channel: from fabrication to alignment of single walled carbon nanotube networks†

We have introduced patterned gold dots between the electrodes of single walled carbon nanotube (SWNT) network films, to effectively guide the path of randomly assembled nanotube networks. Direct visualization results show well-aligned SWNT networks across the gold dots, generating improved SWNT–FET performance with a high on/off ratio of 104 and 85 cm2 V−1s−1 mobility, a remarkable enhancement compared to SWNT–FET in the absence of patterned gold dots. Unlike previously reported alignment techniques used, the proposed method affords the selective alignment of SWNTs within electrodes at room temperature without any direct growth on the device surface, and without the need for further alignment procedures. Thus, this gold-dot pattern technique within FET channel has proven to be truly simple, reliable and cost-effective. We discuss the effect of the voltage, channel size and feature dimensions of the gold nanopatterns in field effect transistor (FET) structures.

Fabrication of sub-20 nm nano-gap structures through the elastomeric nano-stamp assisted secondary sputtering phenomenon

We describe a highly efficient method for fabricating controllable and reliable sub-20 nm scale nano-gap structures through an elastomeric nano-stamp with an embedded ultra-thin pattern. The stamp consists of ultrahigh resolution (approximately 10 nm) and high aspect ratio (ca. 15) metal nano-structures, which are obtained by secondary sputtering lithography (SSL). The nano-gap structures fabricated in this fashion achieve a high resolution and meet the requirements of minimal cost, high reliability, controllability, reproducibility, and applicability to different materials. Further, we demonstrate that this method enables the fabrication of SERS substrates for detection at the single-molecule level.

Polymer-Layer-Free Alignment for Fast Switching Nematic Liquid Crystals by Multifunctional Nanostructured Substrate

A novel polymer-layer-free system for liquid-crystal alignment is demonstrated by various shaped indium tin oxide (ITO) patterns. Liquid crystals are aligned along the ITO line pattern and secondary sputtering lithography can change the shape of the ITO line pattern. Different shapes can control the direction and size of the pretilt angle. This effect eliminates defects and reduces the response time.

10 nm scale nanopatterning on flexible substrates by a secondary sputtering phenomenon and their applications in high performance, flexible and transparent conducting films

We present a simple nanopatterning method for flexible substrates with high resolution (approx. 15 nm) that uses the secondary sputtering phenomenon (SSP) and no solvents at room temperature, and characterize flexible and transparent conducting films that have performances comparable to that of ITO films yet higher mechanical stability.