Hyuck-Jin Kang

Study on reliability of metal fuse for sub-100nm technology

Tungsten bit line fuse has been used for years in repair application but it fails during BOC (board on chip) package PCT (pressure cooker test) because of its weakness to corrosion. We searched for new material against corrosion, and metal-1 aluminum fuse was set up. Although there is no failure in PCT, we have found a fatal failure in IMD (inter-metal dielectric) crack during THB (temperature humidity bias test). We developed SiN full passivation scheme to resolve the failure then there is no failure until THB 1000 hours. Finally we set up metal-1 aluminum fuse process for sub-100 nm technology

Robust Metal/AHO/HSG-Cylinder Capacitor Technology Using Diagonal Cell Array Scheme and Double Mold Oxide

In this paper the novel robust Hemispherical Grain (HSG)-merged Al2O3/HfO2 (AHO) capacitor with diagonal cell array scheme and double mold oxide (DMO) is introduced. The capacitor process with diagonal cell array scheme and double mold oxide can maximize storage node (SN) height up to 2.0 µm in 0.11 µm dynamic random access memory (DRAM) technology by enlarging the bottom size of SN. Also we developed the HSG-merged AHO capacitor for the first time in mass production. The HSG-merged AHO capacitor technique exhibited a capacitance enhancement by 24% without any significant decrease in breakdown voltage compared to Al2O3 (ALO) capacitor.