Hyunhak Jeong

Density functional theory study of graphite oxide for different oxidation levels

The influences of long range Coulomb interaction (LRCI) on Mach-Zehnder interferometer (MZI) constructed on quantum Hall edge states is studied employing bosonization method. The interaction of interchannel zero-modes is shown to give rise to a characteristic energy scale which is of the order of the period of experimentally observed lobe pattern of visibility. The nonmonotonic behavior of visibility as found Chalker et al. is understood analytically using asymptotic analysis.

Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors

We investigated the effects of passivation on the electrical characteristics of molybdenum disulfide (MoS(2)) field effect transistors (FETs) under nitrogen, vacuum, and oxygen environments. When the MoS(2) FETs were exposed to oxygen, the on-current decreased and the threshold voltage shifted in the positive gate bias direction as a result of electrons being trapped by the adsorbed oxygen at the MoS(2) surface. In contrast, the electrical properties of the MoS(2) FETs changed only slightly in the different environments when a passivation layer was created using polymethyl methacrylate (PMMA). Specifically, the carrier concentration of unpassivated devices was reduced to 6.5 × 10(15) cm(-2) in oxygen from 16.3 × 10(15) cm(-2) in nitrogen environment. However, in PMMA-passivated devices, the carrier concentration remained nearly unchanged in the range of 1-3 × 10(15) cm(-2) regardless of the environment. Our study suggests that surface passivation is important for MoS(2)-based electronic devices.

Mechanically Controllable Break Junctions for Molecular Electronics

A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed.

Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors.

We investigated the gate bias stress effects of multilayered MoS2 field effect transistors (FETs) with a back-gated configuration. The electrical stability of the MoS2 FETs can be significantly influenced by the electrical stress type, relative sweep rate, and stress time in an ambient environment. Specifically, when a positive gate bias stress was applied to the MoS2 FET, the current of the device decreased and its threshold shifted in the positive gate bias direction. In contrast, with a negative gate bias stress, the current of the device increased and the threshold shifted in the negative gate bias direction. The gate bias stress effects were enhanced when a gate bias was applied for a longer time or when a slower sweep rate was used. These phenomena can be explained by the charge trapping due to the adsorption or desorption of oxygen and/or water on the MoS2 surface with a positive or negative gate bias, respectively, under an ambient environment. This study will be helpful in understanding the electrical-stress-induced instability of the MoS2-based electronic devices and will also give insight into the design of desirable devices for electronics applications.

Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules.

We investigated the physical properties of molybdenum disulfide (MoS2) atomic crystals with a sulfur vacancy passivation after treatment with alkanethiol molecules including their electrical, Raman, and photoluminescence (PL) characteristics. MoS2, one of the transition metal dichalcogenide materials, is a promising two-dimensional semiconductor material with good physical properties. It is known that sulfur vacancies exist in MoS2, resulting in the n-type behavior of MoS2. The sulfur vacancies on the MoS2 surface tend to form covalent bonds with sulfur-containing groups. In this study, we deposited alkanethiol molecules on MoS2 field effect transistors (FETs) and then characterized the electrical properties of the devices before and after the alkanethiol treatment. We observed that the electrical characteristics of MoS2 FETs dramatically changed after the alkanethiol treatment. We also observed that the Raman and PL spectra of MoS2 films changed after the alkanethiol treatment. These effects are attributed to the thiol (-SH) end groups in alkanethiols bonding at sulfur vacancy sites, thus altering the physical properties of the MoS2. This study will help us better understand the electrical and optical properties of MoS2 and suggest a way of tailoring the properties of MoS2 by passivating a sulfur vacancy with thiol molecules.

Three-terminal single-molecule junctions formed by mechanically controllable break junctions with side gating.

Molecules are promising candidates for electronic device components because of their small size, chemical tunability, and ability to self-assemble. A major challenge when building molecule-based electronic devices is forming reliable molecular junctions and controlling the electrical current through the junctions. Here, we report a three-terminal junction that combines both the ability to form a stable single-molecule junction via the mechanically controllable break junction (MCBJ) technique and the ability to shift the energy levels of the molecule by gating. Using a noncontact side-gate electrode located a few nanometers away from the molecular junction, the conductance of the molecule could be dramatically modulated because the electrical field applied to the molecular junction from the side gate changed the molecular electronic structure, as confirmed by the ab initio calculations. Our study will provide a new design for mechanically stable single-molecule transistor junctions fabricated by the MCBJ method.

Enhanced electron mobility in epitaxial (Ba,La)SnO3 films on BaSnO3(001) substrates

We report the growth of Ba1−xLaxSnO3 (x = 0.00, 0.005, 0.01, 0.02, and 0.04) thin films on the insulating BaSnO3(001) substrate by pulsed laser deposition. The insulating BaSnO3 substrates were grown by the Cu2O-CuO flux, in which the molar fraction of KClO4 was systematically increased to reduce electron carriers and thus induce a doping induced metal-insulator transition, exhibiting a resistivity increase from ∼10−3 to ∼1012 Ω cm at room temperature. We find that all the Ba1−xLaxSnO3 films are epitaxial, showing good in-plane lattice matching with the substrate as confirmed by X-ray reciprocal space mappings and transmission electron microscopy studies. The Ba1−xLaxSnO3 (x = 0.005–0.04) films showed degenerate semiconducting behavior, and the electron mobility at room temperature reached 100 and 85 cm2 V−1 s−1 at doping levels 1.3 × 1020 and 6.8 × 1019 cm−3, respectively. This work demonstrates that thin perovskite stannate films of high quality can be grown on the BaSnO3(001) substrates for potential a...

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

We investigated the photoconductive characteristics of molybdenum disulfide (MoS2) field-effect transistors (FETs) that were fabricated with mechanically exfoliated multi-layer MoS2 flakes. Upon exposure to UV light, we observed an increase in the MoS2 FET current because of electron-hole pair generation. The MoS2 FET current decayed after the UV light was turned off. The current decay processes were fitted using exponential functions with different decay characteristics. Specifically, a fast decay was used at the early stages immediately after turning off the light to account for the exciton relaxation, and a slow decay was used at later stages long after turning off the light due to charge trapping at the oxygen-related defect sites on the MoS2 surface. This photocurrent decay phenomenon of the MoS2 FET was influenced by the measurement environment (i.e., vacuum or oxygen environment) and the electrical gate-bias stress conditions (positive or negative gate biases). The results of this study will enhance the understanding of the influence of environmental and measurement conditions on the optical and electrical properties of MoS2 FETs.

1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory.

We studied noise characteristics of a nanocomposite of polyimide (PI) and phenyl-C61-butyric acid methyl ester (PCBM) (denoted as PI:PCBM), a composite for the organic nonvolatile resistive memory material. The current fluctuations were investigated over a bias range that covers various intermediate resistive states and negative differential resistance (NDR) in organic nanocomposite unipolar resistive memory devices. From the analysis of the 1/f(γ) type noises, scaling behavior between the relative noise power spectral density S̃ and resistance R was observed, indicating a percolating behavior. Considering a linear rate equation of the charge trapping-detrapping at traps, the percolation behavior and NDR could be understood by the modulation of the conductive phase fraction φ with an external bias. This study can enhance the understanding of the NDR phenomena in organic nanocomposite unipolar resistive memory devices in terms of the current path formation and the memory switching.

2‐Amino‐N‐(2,6‐dichloropyridin‐3‐yl)acetamide derivatives as a novel class of HBV capsid assembly inhibitor

Capsid structure is crucial for the maturation and maintenance of the stable hepatitis B virion. Therefore, chemicals that inhibit capsid assembly might potentially act as potent antiviral compounds. However, only a few chemicals are known to block the capsid assembly process and further viral proliferation. In this study, we present a novel family of capsid assembly inhibitors that act against hepatitis B virus (HBV). Based on X‐ray crystallographic data of the HBV core protein (Cp), we built dimer and hexamer structural models to be used in library searches. Several chemicals in the 2‐amino‐N‐(2,6‐dichloropyridin‐3‐yl)acetamide family were predicted to have high affinity for the groove structure in Cp. Using in vitro assembly and the HepG2.2.15 cell culture test, we verified that these chemicals demonstrated inhibitory effects on capsid assembly. Furthermore, we investigated the combinatorial effects of these assembly inhibitor chemicals with lamivudine and revealed that, in combination, they have synergistic inhibitory effects on decreasing viral concentration. We propose that these inhibitors could be utilized as an effective combination treatment against HBV infection.