I. Nedelcu

Thermally enhanced interdiffusion in Mo∕Si multilayers

The formation and development of Mo-Si interfaces in Mo∕Si multilayers upon thermal annealing, including a transition to h‐MoSi2, have been investigated using high resolution transmission electron microscopy, x-ray reflectivity, and x-ray diffraction measurements. The silicide layers naturally formed at Mo-Si interfaces, i.e., just upon and after the deposition, are amorphous and have different thicknesses for as-deposited samples, with the Mo-on-Si interlayer being the largest. In addition, silicide growth at Mo-Si interfaces during annealing before the phase transformation predominantly takes place at the Mo-on-Si interface and a MoSi2 interface layer is formed. Diffusion continues until a thick MoSi2 layer is formed at the interface, at which point the interface crystallizes and diffusion speeds up, finally resulting in an abrupt intermixing and phase transition of the entire interface to h‐MoSi2. This model predicts an onset of the phase transition which does not depend primarily on the annealing temp...

Microstructure of Mo/Si multilayers with B4C diffusion barrier layers

The growth behavior of B(4)C interlayers deposited at the interfaces of Mo/Si multilayers was investigated using x-ray photoemission spectroscopy, x-ray reflectivity, and x-ray diffraction measurements. We report an asymmetry in the formation of B(4)C at the B(4)C-on-Mo interface compared to the B(4)C-on-Si interface. X-ray photoelectron spectroscopy (XPS) depth profiling shows that for B(4)C-on-Mo the formed stoichiometry is close to expectation (4:1 ratio), while for B(4)C-on-Si it is observed that carbon diffuses from the B(4)C interfaces into the multilayer, resulting in nonstochiometric growth (>4:1). As a result, there is a discrepancy in the optical response near 13.5 nm wavelength, where B(4)C-on-Mo behaves according to model simulations, while B(4)C-on-Si does not. The as-deposited off-stoichiometric B(4)C-on-Si interface also explains why these interfaces show poor barrier properties against temperature induced interdiffusion. We show that the stoichiometry of B(4)C at the Mo-Si interfaces is connected to the structure of the layers onto which B(4)C is grown. Because of enhanced diffusion into the amorphous Si surface, we suggest that deposited boron and carbon atoms form Si(X)B(Y) and Si(X)C(Y) compounds. The low formation enthalpy of Si(X)C(Y) ensures C depletion of any B(X)C(Y) interlayer. Only after a saturated interfacial layer is formed, does further deposition of boron and carbon atoms result in actual B(4)C formation. In contrast to the off-stoichiometric B(4)C growth on top of Si, B(4)C grown on top of Mo retains the correct stoichiometry because of the higher formation enthalpies for Mo(X)B(Y) and Mo(X)C(Y) formation and the limited diffusion depth into the (poly)-crystalline Mo surface.

Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition

A new deposition technique that builds on the thermal particle characteristics typical for e-beam deposition is described. This technique applies magnetron sputtering in a special scheme where these characteristics of the e-beam deposition method are achieved. The method was used for interface engineering of Mo/Si multilayers, with different barrier layer materials being tested. Composition of the barrier layers formed was studied using XPS. Results are shown on the general example of a Mo/B4C/Si/B4C system. The ultra-thin reflectance enhancement B4C barriers can be deposited with low added stress, resulting in a multilayer stress as low as about -150 MPa. The best interface engineered multilayers reflect 70.5% at 13.3 nm and 70.15% at 13.5 nm. These results were achieved with 50 period multilayers terminated with a standard Si layer.

Multilayer coatings for the EUVL Process Development Tool

Reported is a summary of the coating of three elements of the illuminator and three of the projection optics of the EUVL Process Development Tool. The coating process used is e-beam evaporation in combination with low energy ion beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65% and the non correctable figure error that is added by the full multilayer stack is controlled to better than 15 picometer.

Enhanced performance of EUV multilayer coatings

Reported is a summary of the development of EUV Mo/Si multilayer coating technology. Though the results are developed for application in Extreme Ultraviolet Lithography, they are of a broader relevance including optics for astronomy. The coating process used consists of electron beam evaporation in combination with low energy ion beam smoothening. The radiation hardness of these coatings is discussed and methods to reduce the multilayer induced substrate stress. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 65%, while the non correctable figure error added by the full multilayer stack is controlled to better than 15 picometer.

Interface diffusion kinetics and lifetime scaling in multilayer Bragg optics

The internal structure of Mo/Si multilayers is investigated during and after thermal annealing. Multilayer period compaction is shown to result from diffusion induced MoSi2 interlayer growth, reducing optical contrast and changing the reflected wavelength. We focus on early-stage interface growth observed at relatively low temperatures (100 °C - 300 °C), determining diffusion constants from parabolic interface growth laws. Diffusion constants obey Arrhenius-type behavior, enabling temperature scaling laws. Using the methods developed, we compare results on Mo/Si based multilayers designed for enhanced thermal stability and discuss their relevant diffusion behavior. Arrhenius-type behavior can be observed in all multilayers studied here, and demonstrates reduction of diffusion rates over several orders of magnitude. The method described here is of general interest for any multilayer application that is subjected to enhanced thermal loads and demonstrates the enormous technology gain that this type of optics has experienced the last decade.

Reflectivity and surface roughness of multilayer-coated substrate recovery layers for EUV lithographic optics

We investigated the use of separation, or substrate recovery, layers (SRLs), to enable the reuse of optical substrates after the deposition of multilayer reflective coatings, in particular Mo/Si multilayers as used for EUV lithography. An organic material (polyimide), known from other work to reduce the roughness of the substrate, was applied to the optical substrate. It appeared to be possible to remove the multilayer coating, including the SRL, without any damage or roughening of the substrate surface. The SRL was spin-coated at 1500 to 6000 rpm on different substrate types (Si, quartz, Zerodur) with diameters up to 100 mm. For this range of parameters, the multilayer centroid wavelength value remained unchanged, and its reflectivity loss on applying the SRL was limited typically to 0.7%. The latter was shown to be caused by a minor increase of the SRL surface roughness in the high-spatial-frequency domain. The roughness, characterized with an atomic force microscope, remained constant at 0.2 nm during all stages of the substrate recovery process, independent of the initial substrate roughness.

Substrate recovery layers for EUVL optics: effects on multilayer reflectivity and surface roughness

We have investigated the use of separation, or substrate recovery layers (SRL) enabling the re-usage of optics substrates after deposition of multilayer reflective coatings, in particular Mo/Si multilayers as used for Extreme UV lithography. An organic material, a polyimide, was applied, from other work known to reduce the roughness of the substrate 1, 2. It appeared to be possible to remove the multilayer coating, including the SRL, without any damage or roughening of the substrate surface. The SRL was spin-coated at 1500 - 6000 rpm on different substrate types (Si, quartz, Zerodur) with diameters up to 100 mm. For this range of parameters, the multilayer centroid wavelength value remained unchanged, while its reflectivity loss, upon applying the SRL, was limited to typically 0.7%. The latter is demonstrated to be caused by a minor increase of the SRL surface roughness in the high spatial frequency domain. The AFM characterized roughness remained constant at 0.2 nm during all stages of the substrate recovery process, independent of the initial substrate roughness.