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Featured researches published by In Chung.


Nature | 2012

All-solid-state dye-sensitized solar cells with high efficiency

In Chung; Byunghong Lee; Jiaqing He; R. P. H. Chang; Mercouri G. Kanatzidis

Dye-sensitized solar cells based on titanium dioxide (TiO2) are promising low-cost alternatives to conventional solid-state photovoltaic devices based on materials such as Si, CdTe and CuIn1−xGaxSe2 (refs 1, 2). Despite offering relatively high conversion efficiencies for solar energy, typical dye-sensitized solar cells suffer from durability problems that result from their use of organic liquid electrolytes containing the iodide/tri-iodide redox couple, which causes serious problems such as electrode corrosion and electrolyte leakage. Replacements for iodine-based liquid electrolytes have been extensively studied, but the efficiencies of the resulting devices remain low. Here we show that the solution-processable p-type direct bandgap semiconductor CsSnI3 can be used for hole conduction in lieu of a liquid electrolyte. The resulting solid-state dye-sensitized solar cells consist of CsSnI2.95F0.05 doped with SnF2, nanoporous TiO2 and the dye N719, and show conversion efficiencies of up to 10.2 per cent (8.51 per cent with a mask). With a bandgap of 1.3 electronvolts, CsSnI3 enhances visible light absorption on the red side of the spectrum to outperform the typical dye-sensitized solar cells in this spectral region.


Journal of the American Chemical Society | 2012

CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

In Chung; Jung Hwan Song; Jino Im; John Androulakis; Christos D. Malliakas; Hao Li; Arthur J. Freeman; John T. Kenney; Mercouri G. Kanatzidis

CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.


Journal of the American Chemical Society | 2009

Chalcogenide chemistry in ionic liquids: nonlinear optical wave-mixing properties of the double-cubane compound [Sb7S8Br2](AlCl4)3.

Qichun Zhang; In Chung; Joon I. Jang; J. B. Ketterson; Mercouri G. Kanatzidis

The new cation [Sb(7)S(8)Br(2)](3+) has a double-cubane structure and forms as the [AlCl(4)](-) salt from the ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) at 165 degrees C. The compound is noncentrosymmetric with space group P2(1)2(1)2(1) and exhibits second-harmonic and difference-frequency nonlinear optical response across a wide range of the visible and near-infrared regions.


Journal of the American Chemical Society | 2010

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework.

Kanishka Biswas; Qichun Zhang; In Chung; Jung Hwan Song; John Androulakis; Arthur J. Freeman; Mercouri G. Kanatzidis

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.


Journal of the American Chemical Society | 2009

Flexible Polar Nanowires of Cs5BiP4Se12 from Weak Interactions between Coordination Complexes: Strong Nonlinear Optical Second Harmonic Generation

In Chung; Jung Hwan Song; Joon I. Jang; Arthur J. Freeman; J. B. Ketterson; Mercouri G. Kanatzidis

The Cs(5)BiP(4)Se(12) salt grows naturally as nanowires that crystallize in the polar space group Pmc2(1), with a = 7.5357(2) A, b = 13.7783(6) A, c = 28.0807(8) A, and Z = 4 at 293(2) K. The compound features octahedral [Bi(P(2)Se(6))(2)](5-) coordination complexes that stack via weak intermolecular Se...Se interactions to form long, flexible fibers and nanowires. The Cs(5)BiP(4)Se(12) fibers are transparent in the near- and mid-IR ranges and were found to exhibit a nonlinear optical second harmonic generation response at 1 microm that is approximately twice that of the benchmark material AgGaSe(2). The material has a nearly direct band gap of 1.85 eV and melts congruently at 590 degrees C. Ab initio electronic structure calculations performed with the full-potential linearized augmented plane wave (FLAPW) method show that the band gap increases from its local density approximation (LDA) spin-orbit coupling value of 1.15 eV to the higher value of 2.0 eV when the screened-exchange LDA method is invoked and explain how the long nanowire nature of Cs(5)BiP(4)Se(12) emerges.


Journal of the American Chemical Society | 2010

Strongly nonlinear optical glass fibers from noncentrosymmetric phase-change chalcogenide materials

In Chung; Joon I. Jang; Christos D. Malliakas; J. B. Ketterson; Mercouri G. Kanatzidis

We report that the one-dimensional polar selenophosphate compounds APSe(6) (A = K, Rb), which show crystal-glass phase-change behavior, exhibit strong second harmonic generation (SHG) response in both crystal and glassy forms. The crystalline materials are type-I phase-matchable with SHG coefficients chi((2)) of 151.3 and 149.4 pm V(-1) for K(+) and Rb(+) salts, respectively, which is the highest among phase-matchable nonlinear optical (NLO) materials with band gaps over 1.0 eV. The glass of APSe(6) exhibits comparable SHG intensities to the top infrared NLO material AgGaSe(2) without any poling treatments. APSe(6) exhibit excellent mid-IR transparency. We demonstrate that starting from noncentrosymmetric phase-change materials such as APSe(6) (A = K, Rb), we can obtain optical glass fibers with strong, intrinsic, and temporally stable second-order nonlinear optical (NLO) response. The as-prepared glass fibers exhibit SHG and difference frequency generation (DFG) responses over a wide range of wavelengths. Raman spectroscopy and pair distribution function (PDF) analyses provide further understanding of the local structure in amorphous state of KPSe(6) bulk glass and glass fiber. We propose that this approach can be widely applied to prepare permanent NLO glass from materials that undergo a phase-change process.


Journal of the American Chemical Society | 2012

Molecular Germanium Selenophosphate Salts: Phase-Change Properties and Strong Second Harmonic Generation

Collin D. Morris; In Chung; Sungoh Park; Connor M. Harrison; Daniel J. Clark; Joon I. Jang; Mercouri G. Kanatzidis

A new series of germanium chalcophosphates with the formula A(4)GeP(4)Q(12) (A = K, Rb, Cs; Q = S, Se) have been synthesized. The selenium compounds are isostructural and crystallize in the polar orthorhombic space group Pca2(1). The sulfur analogues are isostructural to one another but crystallize in the centrosymmetric monoclinic space group C2/c. All structures contain the new molecular anion [GeP(4)Q(12)](4-); however, the difference between the sulfides and selenides arises from the change in crystal packing. Each discrete molecule is comprised of two ethane-like P(2)Q(6) units that chelate to a central tetrahedral Ge(4+) ion in a bidentate fashion. The selenides were synthesized pure by stoichiometric reaction of the starting materials, whereas the sulfides contained second phases. The band gaps of the molecular salts are independent of the alkali metal counterions and have a value of 2.0 eV for the selenides and 3.0-3.1 eV for the sulfides. All A(4)GeP(4)Se(12) compounds melt congruently, and the potassium analogue can be quenched to give a glassy phase that retains its short-range order as shown by Raman spectroscopy and powder X-ray diffraction. Interestingly, K(4)GeP(4)Se(12) is a phase-change material that reversibly converts between glassy and crystalline states and passes through a metastable crystalline state upon heating just before crystallizing into its slow-cooled form. Initial second harmonic generation (SHG) experiments showed crystalline K(4)GeP(4)Se(12) outperforms the other alkali metal analogues and exhibits the strongest second harmonic generation response among reported quaternary chalcophosphates, ~30 times that of AgGaSe(2) at 730 nm. A more thorough investigation of the nonlinear optical (NLO) properties was performed across a range of wavelengths that is almost triple that of previous reports (λ = 1200-2700 nm) and highlights the importance of broadband measurements. Glassy K(4)GeP(4)Se(12) also exhibits a measurable SHG response with no poling.


Inorganic Chemistry | 2013

Semiconducting [(Bi4Te4Br2)(Al 2Cl6-xBrx)]Cl2 and [Bi 2Se2Br](AlCl4): Cationic chalcogenide frameworks from lewis acidic ionic liquids

Kanishka Biswas; In Chung; Jung Hwan Song; Christos D. Malliakas; Arthur J. Freeman; Mercouri G. Kanatzidis

Lewis acidic organic ionic liquids provide a novel synthetic medium to prepare new semiconducting chalcogenides, [(Bi4Te4Br2)(Al2Cl5.46Br0.54)]Cl2 (1) and [Bi2Se2Br](AlCl4) (2). Compound 1 features a cationic [(Bi4Te4Br2)(Al2Cl5.46Br0.54)](2+) three-dimensional framework, while compound 2 consists of cationic layers of [Bi2Se2Br](2+). Spectroscopically measured band gaps of 1 and 2 are ∼0.6 and ∼1.2 eV, respectively. Thermoelectric power measurements of single crystals of 1 indicate an n-type semiconductor.


Optics Letters | 2013

K4GeP4Se12: a case for phase-change nonlinear optical chalcogenide

Joon I. Jang; S. Park; C. M. Harrison; Daniel J. Clark; Collin D. Morris; In Chung; Mercouri G. Kanatzidis

We report on broadband nonlinear optical (NLO) responses from a phase-change chalcogenide compound K(4)GeP(4)Se(12). Its glassy phase exhibits unusual second-harmonic generation (SHG) due to the preservation of local crystallographic order. The SHG efficiency of the glassy form can be boosted by more than 2 orders of magnitude by simple heat treatment. Strong SHG and third-harmonic generation from both glassy and crystalline compounds were characterized over a wide wavelength range of 1.2-4.0 μm. Our results imply that K(4)GeP(4)Se(12) can be utilized for various NLO applications in the mid-infrared spectrum.


Journal of the American Chemical Society | 2017

Enhancing p-Type Thermoelectric Performances of Polycrystalline SnSe via Tuning Phase Transition Temperature

Yong Kyu Lee; Kyunghan Ahn; Joonil Cha; Chongjian Zhou; Hyo Seok Kim; Garam Choi; Sue In Chae; Jae-Hyuk Park; Sung-Pyo Cho; Sang Hyun Park; Yung-Eun Sung; Won Bo Lee; Taeghwan Hyeon; In Chung

SnSe emerges as a new class of thermoelectric materials since the recent discovery of an ultrahigh thermoelectric figure of merit in its single crystals. Achieving such performance in the polycrystalline counterpart is still challenging and requires fundamental understandings of its electrical and thermal transport properties as well as structural chemistry. Here we demonstrate a new strategy of improving conversion efficiency of bulk polycrystalline SnSe thermoelectrics. We show that PbSe alloying decreases the transition temperature between Pnma and Cmcm phases and thereby can serve as a means of controlling its onset temperature. Along with 1% Na doping, delicate control of the alloying fraction markedly enhances electrical conductivity by earlier initiation of bipolar conduction while reducing lattice thermal conductivity by alloy and point defect scattering simultaneously. As a result, a remarkably high peak ZT of ∼1.2 at 773 K as well as average ZT of ∼0.5 from RT to 773 K is achieved for Na0.01(Sn1-xPbx)0.99Se. Surprisingly, spherical-aberration corrected scanning transmission electron microscopic studies reveal that NaySn1-xPbxSe (0 < x ≤ 0.2; y = 0, 0.01) alloys spontaneously form nanoscale particles with a typical size of ∼5-10 nm embedded inside the bulk matrix, rather than solid solutions as previously believed. This unexpected feature results in further reduction in their lattice thermal conductivity.

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David P. Weliky

Michigan State University

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Taeghwan Hyeon

Seoul National University

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Yong Kyu Lee

Seoul National University

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