Jung Hwan Song

CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions

CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.

Synthesis in ionic liquids: [Bi2Te2Br](AlCl4), a direct gap semiconductor with a cationic framework.

The Lewis acidic ionic liquid EMIMBr-AlCl(3) (EMIM = 1-ethyl-3-methylimidazolium) allows a novel synthetic route to the semiconducting layered metal chalcogenides halide [Bi(2)Te(2)Br](AlCl(4)) and its Sb analogue. [Bi(2)Te(2)Br](AlCl(4)) is a direct band gap, strongly anisotropic semiconductor and consists of cationic infinite layers of [Bi(2)Te(2)Br](+) and [AlCl(4)](-) anions inserted between the layers.

Flexible Polar Nanowires of Cs5BiP4Se12 from Weak Interactions between Coordination Complexes: Strong Nonlinear Optical Second Harmonic Generation

The Cs(5)BiP(4)Se(12) salt grows naturally as nanowires that crystallize in the polar space group Pmc2(1), with a = 7.5357(2) A, b = 13.7783(6) A, c = 28.0807(8) A, and Z = 4 at 293(2) K. The compound features octahedral [Bi(P(2)Se(6))(2)](5-) coordination complexes that stack via weak intermolecular Se...Se interactions to form long, flexible fibers and nanowires. The Cs(5)BiP(4)Se(12) fibers are transparent in the near- and mid-IR ranges and were found to exhibit a nonlinear optical second harmonic generation response at 1 microm that is approximately twice that of the benchmark material AgGaSe(2). The material has a nearly direct band gap of 1.85 eV and melts congruently at 590 degrees C. Ab initio electronic structure calculations performed with the full-potential linearized augmented plane wave (FLAPW) method show that the band gap increases from its local density approximation (LDA) spin-orbit coupling value of 1.15 eV to the higher value of 2.0 eV when the screened-exchange LDA method is invoked and explain how the long nanowire nature of Cs(5)BiP(4)Se(12) emerges.

Dimensional Reduction: A Design Tool for New Radiation Detection Materials

John Androulakis , Sebastian C. Peter , Hao Li , Christos D. Malliakas , John A. Peters , Zhifu Liu , Bruce W W. essels , Jung-Hwan Song , Hosub Jin , Arthur J. reeman , F and Mercouri G. Kanatzidis *

Thallium chalcohalides for X-ray and γ-ray detection.

We report that the chalcohalide compound Tl(6)SeI(4) is a promising material for efficient X-ray and γ-ray detection. This material has a higher figure of merit than the current state-of-the-art material for room-temperature operation, Cd(0.9)Zn(0.1)Te (CZT). We have synthesized high-quality single-crystalline wafers of Tl(6)SeI(4) with detector-grade resistivities and good carrier transport of both electrons and holes. We demonstrate that pulse height spectra recorded using Co-57 radiation show an energy resolution matching that of a commercial CZT detector material.

Electronic and thermoelectric analysis of phases in the In2O3(ZnO)k system

The high-temperature electrical conductivity and thermopower of several compounds in the In2O3(ZnO)k system (k=3, 5, 7, and 9) were measured, and the band structures of the k=1, 2, and 3 structures were predicted based on first-principles calculations. These phases exhibit highly dispersed conduction bands consistent with transparent conducting oxide behavior. Jonker plots (Seebeck coefficient versus natural logarithm of conductivity) were used to obtain the product of the density of states and mobility for these phases, which were related to the maximum achievable power factor (thermopower squared times conductivity) for each phase by Ioffe analysis (maximum power factor versus Jonker plot intercept). With the exception of the k=9 phase, all other phases were found to have maximum predicted power factors comparable to other thermoelectric oxides if suitably doped.

Semiconducting [(Bi4Te4Br2)(Al 2Cl6-xBrx)]Cl2 and [Bi 2Se2Br](AlCl4): Cationic chalcogenide frameworks from lewis acidic ionic liquids

Lewis acidic organic ionic liquids provide a novel synthetic medium to prepare new semiconducting chalcogenides, [(Bi4Te4Br2)(Al2Cl5.46Br0.54)]Cl2 (1) and [Bi2Se2Br](AlCl4) (2). Compound 1 features a cationic [(Bi4Te4Br2)(Al2Cl5.46Br0.54)](2+) three-dimensional framework, while compound 2 consists of cationic layers of [Bi2Se2Br](2+). Spectroscopically measured band gaps of 1 and 2 are ∼0.6 and ∼1.2 eV, respectively. Thermoelectric power measurements of single crystals of 1 indicate an n-type semiconductor.

Candidates for topological insulators: Pb-based chalcogenide series

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb

Dirac cone engineering in Bi 2 Se 3 thin films

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The Tellurophosphate K4P8Te4: Phase-Change Properties, Exfoliation, Photoluminescence in Solution and Nanospheres

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