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Ino Tsunehiro

Toshiba

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Publication

Featured researches published by Ino Tsunehiro.

Archive | 2007

SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT

Ino Tsunehiro; Koyama Masato

Archive | 2006

ELECTRIC RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE EQUIPPED WITH ELECTRIC RESISTANCE CHANGING ELEMENT AND ITS MANUFACTURING METHOD

Ino Tsunehiro; Koike Masahiro; Koyama Masato

Archive | 2016

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND FERROELECTRIC LAYER

Ino Tsunehiro; Fujii Shosuke; Inumiya Seiji

Archive | 2004

Semiconductor device and fabricating method thereof to form insulation layer including nitrogen-coupled metal silicate layer that has high dielectric constant and reduces leakage current as compared with oxide layer

Koike Masahiro; Koyama Masato; Ino Tsunehiro; Kamimuta Yuuichi; Takashima Akira; Suzuki Masamichi; Nishiyama Akira

Archive | 2010

SEMICONDUCTOR STORAGE ELEMENT, AND METHOD OF MANUFACTURING THE SAME

Ino Tsunehiro; Fujii Akisuke; Fujiki Jun; Takashima Akira; Shingu Masao; Matsushita Daisuke; Yasuda Naoki; Muraoka Koichi

Archive | 2017

INSULATING FILM AND STORAGE DEVICE

Ino Tsunehiro; Nakasaki Yasushi; Fujii Akisuke; Matsushita Daisuke

IEICE Technical Report; IEICE Tech. Rep. | 2017

Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)

Yamaguchi Marina; Fujii Shosuke; Kamimuta Yuuichi; Ino Tsunehiro; Takaishi Riichiro; Nakasaki Yasushi; Saitoh Masumi

The Japan Society of Applied Physics | 2016

Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method

Yuichi Kamimuta; Shosuke Fujii; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

IEICE Technical Report; IEICE Tech. Rep. | 2016

Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction

Yuuichi Kamimuta; Fujii Shosuke; Ino Tsunehiro; Takaishi Riichiro; Nakasaki Yasushi; Saitoh Masumi

IEICE Technical Report; IEICE Tech. Rep. | 2016

Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

Kamimuta Yuuichi; Fujii Shosuke; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

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Fujii Shosuke

Toshiba

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Koyama Masato

Toshiba

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Nakasaki Yasushi

Toshiba

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Saitoh Masumi

Toshiba

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Takaishi Riichiro

Toshiba

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Inumiya Seiji

Toshiba

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Shosuke Fujii

Toshiba

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Suzuki Masamichi

Toshiba

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Yuichi Kamimuta

Toshiba

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Yuuichi Kamimuta

Toshiba

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