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Saitoh Masumi

Toshiba

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Publication

Featured researches published by Saitoh Masumi.

Archive | 2016

IMAGING ELEMENT, IMAGING DEVICE AND SEMICONDUCTOR DEVICE

Higashi Yusuke; Marukame Takao; Noguchi Hiroki; Mitani Yuuichiro; Saitoh Masumi

Archive | 2016

RESISTANCE CHANGE MEMORY, METHOD OF MANUFACTURING RESISTANCE CHANGE MEMORY, AND FET

Ota Kensuke; Saitoh Masumi

The Japan Society of Applied Physics | 2018

Chemical state analysis of ferroelectric HfSiO MIM structure by HAXPES evaluation

Koji Usuda; Yuuichi Kamimuta; Shoichi Kabuyanagi; Masahiko Yoshiki; Mitsuhiro Tomita; Saitoh Masumi

IEICE Technical Report; IEICE Tech. Rep. | 2017

Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)

Yamaguchi Marina; Fujii Shosuke; Kamimuta Yuuichi; Ino Tsunehiro; Takaishi Riichiro; Nakasaki Yasushi; Saitoh Masumi

The Japan Society of Applied Physics | 2016

Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method

Yuichi Kamimuta; Shosuke Fujii; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

Archive | 2016

SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

Sakuma Kiwamu; Fujii Shosuke; Saitoh Masumi; Sasaki Toshiyuki

Microelectronics Journal | 2016

トライゲートSiナノワイヤトランジスタ用のBSIM4パラメータ抽出【Powered by NICT】

Tanaka Chika; Saitoh Masumi; Ota Kensuke; Ishikawa Takayuki; Numata Toshinori

IEICE Technical Report; IEICE Tech. Rep. | 2016

Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction

Yuuichi Kamimuta; Fujii Shosuke; Ino Tsunehiro; Takaishi Riichiro; Nakasaki Yasushi; Saitoh Masumi

IEICE Technical Report; IEICE Tech. Rep. | 2016

Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

Kamimuta Yuuichi; Fujii Shosuke; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

IEEE Conference Proceedings | 2016

低動作電流と固有ダイオード特性を持つ強誘電性HfO_2ベース抵抗スイッチの初めての実証と性能向上【Powered by NICT】

Fujii Shosuke; Kamimuta Yuuichi; Ino Tsunehiro; Nakasaki Yasushi; Takaishi Riichiro; Saitoh Masumi

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Fujii Shosuke

Toshiba

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Ino Tsunehiro

Toshiba

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Nakasaki Yasushi

Toshiba

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Takaishi Riichiro

Toshiba

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Ota Kensuke

Toshiba

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Tanaka Chika

Toshiba

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Koyama Masato

Toshiba

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Yuuichi Kamimuta

Toshiba

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Higashi Yusuke

Toshiba

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Koji Usuda

National Institute of Advanced Industrial Science and Technology

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