Koyama Masato | Researchain

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Featured researches published by Koyama Masato.

Archive | 2007

SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR INTEGRATED CIRCUIT

Ino Tsunehiro; Koyama Masato

Archive | 2006

ELECTRIC RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE EQUIPPED WITH ELECTRIC RESISTANCE CHANGING ELEMENT AND ITS MANUFACTURING METHOD

Ino Tsunehiro; Koike Masahiro; Koyama Masato

Archive | 2004

Semiconductor device and fabricating method thereof to form insulation layer including nitrogen-coupled metal silicate layer that has high dielectric constant and reduces leakage current as compared with oxide layer

Koike Masahiro; Koyama Masato; Ino Tsunehiro; Kamimuta Yuuichi; Takashima Akira; Suzuki Masamichi; Nishiyama Akira

The Japan Society of Applied Physics | 2016

Consideration for the process dependence of electrical characteristics by the structural analysis of the ferroelectric HfSiO film using FT-IR method

Yuichi Kamimuta; Shosuke Fujii; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

IEICE Technical Report; IEICE Tech. Rep. | 2016

Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

Kamimuta Yuuichi; Fujii Shosuke; Takaishi Riichiro; Ino Tsunehiro; Nakasaki Yasushi; Saitoh Masumi; Koyama Masato

Archive | 2013

RESISTANCE CHANGE MEMORY ELEMENT

Ishikawa Takayuki; Nishi Yoshifumi; Matsushita Daisuke; Koyama Masato

Archive | 2007

NON-VOLATILE SWITCHING ELEMENT, ITS MANUFACTURING METHOD AND INTEGRATED CIRCUIT HAVING THE SAME

Ino Tsunehiro; Koyama Masato

IEICE Technical Report; IEICE Tech. Rep. | 2007

Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics.

Suzuki Masamichi; Tsuchiya Yoshinori; Koyama Masato

IEICE Technical Report; IEICE Tech. Rep. | 2007

Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2

Takashima Akira; Nishikawa Yukie; Schimizu Tatsuo; Suzuki Masamichi; Matsushita Daisuke; Yoshiki Masahiko; Tomita Mitsuhiro; Yamaguchi Takeshi; Koyama Masato; Fukushima Noburu

IEICE Technical Report; IEICE Tech. Rep. | 2007

Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond

Koyama Masato; Koike Masahiro; Kamimuta Yuuichi; Suzuki Masamichi; Tatsumura Kosuke; Tsuchiya Yoshinori; Ichihara Reika; Goto Masakazu; Nagatomo Koji; Azuma Atsushi; Kawanaka Shigeru; Nakajima Kazuaki; Sekine Katsuyuki

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